TITLE

IMEC Reports Potential of Fully Silicided Gates for Low-Power Apps

PUB. DATE
June 2006
SOURCE
Electronic News;6/26/2006, Vol. 52 Issue 26, p6
SOURCE TYPE
Trade Publication
DOC. TYPE
Article
ABSTRACT
The article focuses on the Ni-based fully silicided (FUSI) technology introduced by the Interuniversity Microelectronics Center at the Symposium on VLSI Circuits in Honolulu, Hawaii in June 2006. The center made FUSI a manufacturable and reliable process for the 45nm node. Excellent low-power, high-performance specifications were achieved and process window has been improved and work function can be modulated in a practical way.
ACCESSION #
21618793

 

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