Freescale Pushes SSOI CMOS to 45nm

June 2006
Electronic News;6/19/2006, Vol. 52 Issue 25, p17
Trade Publication
The article reports that Freescale Semiconductor has claimed an advanced CMOS technology that uses strained silicon-on-insulator substrates for the 45nm level. The technology is made possible by hybrid strain techniques. Freescale is evaluating the technology for the 45nm node and beyond and pointed to advanced networking equipment and gaming consoles as initial applications for strained silicon-on-insulator from the company.


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