High-k and low-k nanocomposite gate dielectrics for low voltage organic thin film transistors

Chang Su Kim; Sung Jin Jo; Sung Won Lee; Woo Jin Kim; Hong Koo Baik; Se Jong Lee; Hwang, D. K.; Seongil Im
June 2006
Applied Physics Letters;6/12/2006, Vol. 88 Issue 24, p243515
Academic Journal
CeO2–SiO2 nanocomposite films were used as the gate dielectrics in organic thin film transistors (OTFTs) with pentacene active semiconductor. CeO2–SiO2 composite films exhibited a high dielectric capacitance of 57 nF/cm2 with exceptionally low leakage current. Good device characteristics were obtained with saturation at low operating voltages (∼2 V) and with a field effect mobility of 0.84 cm2 V-1 s-1, a threshold voltage of ∼0.25 V, an on/off current ratio of 103, and a subthreshold slope of 0.3 V/decade, whereas the gate leakage current density is considerably lowered. These results should therefore increase the prospects of using OTFTs in low power applications such as portable devices.


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