TITLE

Structural dependence of the tunnel magnetoresistance for magnetic tunnel junctions with a full-Heusler Co2Fe(Al,Si) electrode

AUTHOR(S)
Tezuka, N.; Okamura, S.; Miyazaki, A.; Kikuchi, M.; Inomata, K.
PUB. DATE
April 2006
SOURCE
Journal of Applied Physics;4/15/2006, Vol. 99 Issue 8, p08T314
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have investigated the crystal structure and magnetic moment of the Co2FeAl and Co2FeSi films deposited onto thermally oxidized Si and MgO(100) single-crystal substrates, and the structural effect on the tunnel magnetoresistance (TMR) of the magnetic tunnel junctions (MTJs) using a Co2FeZ (Z=Al or Si). The structure was changed by the substrate and postannealing temperatures, in which the fully epitaxial and polycrystalline Co2FeAl and Co2FeSi films were obtained with the different disorder structure. The magnetic moment of Co2FeAl films was found to be uninfluenced by the crystal structure. Spin-valve-type MTJs consisting of Co2FeZ(100 nm)/Al(1.2 nm)-oxide/Co75Fe25(2 nm)/IrMn(10 nm)/Ta(60 nm) were fabricated (Z=Al or Si) on thermally oxidized Si and MgO(100) single-crystal substrates. The maximum TMR obtained is about 50% at room temperature for MTJs with Co2FeAl films, regardless of the crystal structure of Co2FeAl.
ACCESSION #
21125619

 

Related Articles

  • Improvement of transport properties for polycrystalline silicon prepared by plasma-enhanced chemical vapor deposition. Kamiya, T.; Suemasu, A.; Watanabe, T.; Sameshima, T.; Shimizu, I. // Applied Physics A: Materials Science & Processing;2001, Vol. 73 Issue 2, p151 

    The carrier transport property of polycrystalline silicon (poly-Si:H:F) thin films was studied in relation to film microstructure, impurity, in situ or post-annealing treatments to obtain better carrier transport properties. Poly-Si:H:F films were prepared from SiF[sub 4] and H[sub 2] gas...

  • Temperature Dependence of Magnetization Reversal of Thin Manganite Film. Uspenskaya, L.; Nurgaliev, T.; Miteva, S. // Acta Physica Polonica, A.;Jan2010, Vol. 117 Issue 1, p207 

    The magnetic domain structure, its transformation with temperature, and the magnetization reversal in 20 nm La0.7Sr0.3MnO3 film grown on LaAlO3 substrate by off-axis magnetron sputtering at 700 °C and post-annealed at 600 °C were studied in a wide temperature range. The magnetic domains...

  • Magnetoresistance in tunnel junctions using Co2(Cr,Fe)Al full Heusler alloys. Inomata, K.; Tezuka, N.; Okamura, S.; Kurebayashi, H.; Hirohata, A. // Journal of Applied Physics;6/1/2004, Vol. 95 Issue 11, p7234 

    We grew Co2(Cr1-xFex)Al Heusler alloy films using a magnetron sputtering system on thermally oxidized Si substrates at room temperature without any buffer layers. The x-ray diffraction patterns did not show the L21 structure as expected for the bulk but revealed the B2 and A2 structures,...

  • Yttria-stabilized zirconia buffered silicon to optimize in-plane electrical conductivity of [Ca2CoO3]0.62[CoO2] thin films. Kraus, T.; Griesser, A.; Klein, O.; Fischer, M.; Schreck, M.; Karla, H. // Applied Physics Letters;5/5/2014, Vol. 104 Issue 18, p1 

    The monolithic integration of thermoelectric generators and magnetoresistive functionality on the basis of misfit cobaltate [Ca2CoO3]0.62[CoO2] thin films into silicon technology is a prerequisite for their application in miniaturized electric circuits. Here, we report on [Ca2CoO3]0.62[CoO2]...

  • Thickness and annealing dependence of the superconducting transition temperature of YBa2Cu3O7-x thin films on oxidized silicon and polycrystalline alumina substrates. Mogro-Campero, A.; Turner, L. G.; Kendall, G. // Applied Physics Letters;12/19/1988, Vol. 53 Issue 25, p2566 

    Superconducting thin films of YBa2Cu3O7-x in the thickness range of 0.2–0.9 μm were tested in this study. A zirconia buffer layer was used to minimize interdiffusion on oxidized silicon and polycrystalline alumina substrates. The highest zero resistance transition temperatures (85 K...

  • Spin-Valve Magnetoresistive Structures Based on Co/Tb Multilayer Films. Svalov, A. V.; Savin, P. A.; Kurlyandskaya, G. V.; Gutiérrez, J.; Vas’kovskiy, V. O. // Technical Physics;Aug2002, Vol. 47 Issue 8, p987 

    The effect of the layer thickness on the magnetic properties of {Co/Tb}[sub n], {Co/Tb}[sub n]/Co, and {Co/Tb}[sub n]/Co/Cu/Co multilayer films is studied. The dependence of the hysteresis and magnetoresistive properties of {Co(1 nm)/Tb(1 nm)}[sub n]/Co(5 nm)/Cu(L[sub Cu])/Co(5 nm) structures on...

  • Low-energy ion beam-assisted deposition of giant magnetoresistive thin films. Guilfoyle, S. J.; Pollard, R. J.; Grundy, P. J. // Journal of Applied Physics;4/15/1996, Vol. 79 Issue 8, p4939 

    Presents a study that examined granular and multilayer cobalt-silver and nickel-iron-silver thin films. Use of magnetron sputtering and concurrent low-energy ion radiation-assisted deposition in the preparation of the films; Effects of ion beam bombardment on granular films; Difference between...

  • Room temperature La[sub 0.7]Sr[sub 0.3]MnO[sub3] magnetoresistive prototype memory element. Cadieu, F.J.; Li Chen; Biao Li; Theodoropoulos, T. // Applied Physics Letters;11/22/1999, Vol. 75 Issue 21, p3369 

    Reports that highly textured La[sub 0.7]Sr[sub 0.3]MnO[sub 3] polycrystalline film strips and an interacting bias magnet have been used to construct a prototype room temperature memory element. Magnetoresistance of the film strips; Memory element magnetoresistive response for field excursions.

  • Mesotaxy: Single-crystal growth of buried CoSi2 layers. White, Alice E.; Short, K. T.; Dynes, R. C.; Garno, J. P.; Gibson, J. M. // Applied Physics Letters;1/12/1987, Vol. 50 Issue 2, p95 

    Buried single-crystal CoSi2 layers in silicon have been formed by high dose implantation of cobalt followed by annealing. These layers grow in both the (100) and (111) orientations—those in (111) have better crystallinity, but those in (100) are of higher electrical quality. Electrical...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics