Colossal electroresistance effect at metal electrode/La1-xSr1+xMnO4 interfaces

Tokunaga, Y.; Kaneko, Y.; He, J. P.; Arima, T.; Sawa, A.; Fujii, T.; Kawasaki, M.; Tokura, Y.
May 2006
Applied Physics Letters;5/29/2006, Vol. 88 Issue 22, p223507
Academic Journal
We have studied the current-voltage (I-V) characteristics and resistance switching at the interface between metal electrodes M (=Pt, Au, Ag, Al, Ti, and Mg) and atomically flat cleaved (001) surfaces of La1-xSr1+xMnO4 (x=0–1.0) single crystals by using a three-probe method. Hysteretic I-V characteristics, indicating the appearance of the resistance switching, were observed in the junctions for M=Mg, Al, and Ti, which have relatively shallow work functions. The resistance switching ratio depends on the hole doping x and the optimal doping level is around x=0.5, verifying that the resistance switching property can be controlled by the doping level.


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