Giant tunneling magnetoresistance in Co2MnSi/Al–O/Co2MnSi magnetic tunnel junctions

Sakuraba, Y.; Hattori, M.; Oogane, M.; Ando, Y.; Kato, H.; Sakuma, A.; Miyazaki, T.; Kubota, H.
May 2006
Applied Physics Letters;5/8/2006, Vol. 88 Issue 19, p192508
Academic Journal
Magnetic tunnel junctions (MTJs) with a stacking structure of Co2MnSi/Al–O/Co2MnSi were fabricated using magnetron sputtering system. Fabricated MTJ exhibited an extremely large tunneling magnetoresistance (TMR) ratio of 570% at low temperature, which is the highest TMR ratio reported to date for an amorphous Al–O tunneling barrier. The observed dependence of tunneling conductance on bias voltage clearly reveals the half-metallic energy gap of Co2MnSi. The origins of large temperature dependence of TMR ratio were discussed on the basis of the present results.


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