TITLE

Interfacial properties of high-k dielectric CaZrOx films deposited by pulsed laser deposition

AUTHOR(S)
Qiu, X. Y.; Liu, H. W.; Fang, F.; Ha, M. J.; Liu, Z. G.; Liu, J.-M.
PUB. DATE
May 2006
SOURCE
Applied Physics Letters;5/1/2006, Vol. 88 Issue 18, p182907
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The interfacial properties of high-k dielectric CaZrOx thin films deposited by pulsed laser deposition in O2 and N2 ambient are investigated. The SiOx (x<2) interfacial layer is observed for the films deposited at 300 °C in 20 Pa O2. Rapid thermal annealing (RTA) of the films at 700 °C in N2 for 10 s allows for oxidization of the interfacial layers into SiO2 and decomposition of the films into nano-ZrO2 crystals embedded in the matrix of amorphous CaO-rich zirconate. However, by the same RTA, the films deposited at 300 °C in 20 Pa N2 remain amorphous with clean Si/CaZrOx interface and exhibit good electrical performances.
ACCESSION #
20854977

 

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