Cantilever temperature characterization in low temperature vacuum atomic force microscope

Kazantsev, D. V.; Dal Savio, C.; Danzebrink, H. U.
April 2006
Review of Scientific Instruments;Apr2006, Vol. 77 Issue 4, p043704
Academic Journal
The frequency response of an atomic force microscope silicon cantilever located in a vacuum cryostat chamber was investigated. The resonance frequency and the peak width were extracted by a Lorentzian fit of the resonance curves for different sample temperatures (15–310 K). Frequency shifts significantly less than one could expect from known temperature dependencies of Young’s modulus and the density of silicon were found. The estimations described in this article show that the temperature of a silicon cantilever is mainly defined by the temperature of its holder, mainly due to the thermal conductivity of silicon. Thermal radiation emission plays a minor role in cooling the cantilever. Furthermore, heat transport through tip-sample contact, as well as contact with the environmental gas, could be neglected.


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