IBM Explores Atom-Scale Magnetism

April 2006
Electronic News;4/3/2006, Vol. 52 Issue 14, p51
Trade Publication
The article reports on a new technique for the exploration and controlling magnetism at its fundamental atomic level developed by IBM scientists. The development enables the firm to position atoms and measure and control their magnetic interactions according to Andreas Heinrich, research staff member at the Almaden Research Center of IBM in San Jose, California. Chains of up to 10 manganese atoms on top of thin electrically insulating surface were created by IBM researchers for the technique development.


Related Articles

  • IBM Researchers Store a Bit on 12 Atoms.  // Information Management Journal;May/Jun2012, Vol. 46 Issue 3, p8 

    The article offers information on a study, authored by Andreas Heinrich, that reveals the success of IBM researchers in finding out how a single bit of data can be stored in 12 atoms.

  • Use of Manganese-Bearing Metallurgical Waste in the Production of Insulating Glass. Ardeeva, M. F.; Vereshchagin, V. I.; Kaz'mina, O. V. // Glass & Ceramics;Nov/Dec2003, Vol. 60 Issue 11/12, p382 

    The possibility of using manganese-bearing waste generated at the Kemerovo Metallurgical Works as a pigment for insulating glass is investigated. It is established that when this waste is treated by magnetic separation and the glass-melting procedure is modified, the waste can be used for steady...

  • Investigation of weak interlayer exchange coupling in GaMnAs/GaAs superlattices with insulating nonmagnetic spacers. Chung, Jae-Ho; Song, Young-Sang; Yoo, Taehee; Chung, Sun Jae; Lee, Sanghoon; Kirby, B. J.; Liu, X.; Furdyna, J. K. // Journal of Applied Physics;Jul2011, Vol. 110 Issue 1, p013912 

    A robust long-range antiferromagnetic coupling between ferromagnetic Ga0.97Mn0.03As layers has previously been realized via insertion of nonmagnetic Be-doped GaAs spacers between the magnetic layers. In this paper we report the observation of weak antiferromagnetic coupling between...

  • Pinhole analysis in magnetic tunnel junctions. Schad, R.; Allen, D.; Zangari, Giovanni; Zana, Iulica; Yang, D.; Tondra, Mark; Wang, Dexin // Applied Physics Letters;1/31/2000, Vol. 76 Issue 5, p607 

    Pinholes in the insulating layer of magnetic tunnel junctions are local shortcuts and cause malfunction of such devices. The need for reduction of the tunnel resistance by reduction of the insulator thickness will make this problem even more severe. Therefore, the development of low-resistance...

  • Effect of isotopic composition and microstructure on the crystalline and magnetic phase states in R0.5Sr0.5MnO3. Balagurov, A. M.; Bobrikov, I. A.; Pomjakushin, V. Yu.; Sheptyakov, D. V.; Babushkina, N. A.; Gorbenko, O. Yu.; Kartavtseva, M. S.; Kaul, A. R. // Journal of Experimental & Theoretical Physics;Mar2008, Vol. 106 Issue 3, p528 

    The results of structural neutron experiments on determining crystal and magnetic phase states of perovskite-like manganites R0.5Sr0.5MnO3 (R = 152Sm, Nd0.772Tb0.228, and Nd0.544Tb0.456) are reported. Experiments are carried out for revealing microscopic factors responsible for the giant oxygen...

  • Energetic stability and magnetic properties of Mn dimers in silicon. Bernardini, F.; Picozzi, S.; Continenza, A. // Applied Physics Letters;3/29/2004, Vol. 84 Issue 13, p2289 

    We present an accurate first-principles study of magnetism and energetics of single Mn impurities and Mn dimers in Si. Our results, in general agreement with available experiments, show that (i) Mn atoms tend to aggregate, the formation energy of dimers being lower than the sum of the separate...

  • The Influence of Interatomic Distances on Magnetic Ordering in RMnSi Compounds (R = La, Y, Sm, and Gd). Nikitin, S. A.; Ivanova, T. I.; Ovchenkova, Yu. A.; Maslennikova, M. V.; Burkhanov, G. S.; Chistyakov, O. D. // Physics of the Solid State;Feb2002, Vol. 44 Issue 2, p308 

    Magnetic ordering in the RMnSi (R = La, Y, Sm, and Gd) compounds is investigated. It is found that the type of magnetic ordering depends on the d[sub Mn-Mn] distance between manganese atoms inside the magnetic layers located in the planes perpendicular to the c axis. This inference is based on...

  • Equilibrium Magnetic and Orbital States of the Manganites with Four Manganese Atoms in the Unit Cell. Dunaevsky, S.M.; Deriglazov, V.V. // Physics of the Solid State;Mar2004, Vol. 46 Issue 3, p510 

    The carrier energy spectrum and the total energy of various magnetic and orbital crystal-structure configurations of the manganites R[sub 1 – x]A[sub x]MnO[sub 3](R = La, Pr, Nd, Sm, etc.; A = Ca, Sr, Ba) with four manganese atoms in the unit cell have been calculated for the electron...

  • Electric transport through nanometric CoFe2O4 thin films investigated by conducting atomic force microscopy. Foerster, M.; Gutierrez, D. F.; Rebled, J. M.; Arbelo, E.; Rigato, F.; Jourdan, M.; Peiró, F.; Fontcuberta, J. // Journal of Applied Physics;Jan2012, Vol. 111 Issue 1, p013904 

    A systematic study of electric transport through thin (2-8 nm) CoFe2O4 films deposited on epitaxial SrRuO3 bottom electrodes was performed by conducting atomic force microscopy (CAFM). Experimental procedures to investigate transport through thin insulating films by CAFM are critically revised,...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics