TITLE

Preparation, spectroscopic characterization, and deprotonation reactions of Si(NHR)4 (R = i-Pr, t-Bu, p-tolyl) – EPR identification of persistent radicals formed by oxidation of polyimidosilicates

AUTHOR(S)
Armstrong, Andrea F.; Chivers, Tristram; Konu, Jari
PUB. DATE
January 2006
SOURCE
Canadian Journal of Chemistry;Jan2006, Vol. 84 Issue 1, p21
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Treatment of Cl2Si(NH-t-Bu)2 (6a) with t-BuNH2 in boiling toluene yields trisamino(chloro)silane ClSi(NH-t-Bu)3 (7); formation of the tetraaminosilane Si(NH-t-Bu)4 is not observed. The reaction of SiCl4 with 4 equiv. of LiNHR produces the corresponding tetraaminosilanes Si(NHR)4 (2a, R = i-Pr; 2b, R = t-Bu; 2c, R = p-tol) in good yields. When the sterically demanding adamantyl derivative LiHNAd is employed, only disubstitution occurs to form Cl2Si(NHAd)2 (6b). Oxidation of the dimeric imidosilicates {Li3[Si(NR)3(NHR)]·THF}2 (3a, R = i-Pr; 3b, R = t-Bu) with 1 mol of iodine produces the persistent radicals {Li2[Si(NR)3(NHR)]·LiI·3THF}·, which, on the basis of EPR spectra, exist as SiN3Li3I cubes in solution. The spirocyclic tetraimidosilicate monoanion radical {[(THF)2Li(µ-Nnaph)2Si(µ-Nnaph)2Li(THF)2]}–· (10) is formed upon oxidation of the tetralithiated species {Li4[Si(Nnaph)4]·4Et2O} (1) and {[Li(12-crown-4)]2[(Et2O)2Li(µ-Nnaph)2Si(µ-Nnaph)2Li(Et2O)2]} (8) with iodine. The spectroscopic characterization of hexa(amino)disiloxane (t-BuNH)3SiOSi(NH-t-Bu)3 (14) formed from the reaction of Cl3SiOSiCl3 with 6 equiv. of LiNH-t-Bu is discussed.
ACCESSION #
20454176

 

Related Articles

  • Laser direct writing of micron-size silicon lines from trisilane. Boughaba, S.; Auvert, G. // Journal of Applied Physics;12/1/1995, Vol. 78 Issue 11, p6791 

    Studies laser direct writing of micron-size silicon lines from trisilane. Method of the study; Results and discussion; Conclusion.

  • Mono- and disilicon radicals in silane and silane-argon dc discharges. Robertson, Robert; Gallagher, Alan // Journal of Applied Physics;5/15/1986, Vol. 59 Issue 10, p3402 

    Presents a study that examined the measurements of monosilicon and disilicon radicals at the cathode surface of direct current discharges in silane and silane-argon mixtures. Information on hydrogenated amorphous silicon films; Discussion on electron processes.

  • Kinetic aspects of epitaxial silicon growth using disilane in a rapid thermal processing system. Pares, G.; Regolini, J. L.; Mercier, J.; Dutartre, D.; Bensahel, D. // Journal of Applied Physics;11/1/1990, Vol. 68 Issue 9, p4885 

    Presents a study that measured the epitaxial growth rate of silicon in the disilane/hydrogen system for different experimental conditions in a rapid thermal processing-low-pressure chemical vapor deposition reactor. Information on the measured activation energy; Growth rate dependence on...

  • Measurement of Si atom density in radio-frequency silane plasma using ultraviolet absorption spectroscopy. Sakakibara, Masafumi; Hiramatsu, Mineo; Goto, Toshio // Journal of Applied Physics;3/15/1991, Vol. 69 Issue 6, p3467 

    Focuses on a study which measured the silicon atom densities at two ground levels in the on and off modulated radio-frequency discharge silane plasma. Methodology of the study; Investigation of the silicon atom densities as functions of the silicon tetrahydride concentration in silicon...

  • Gas-phase kinetics in the atmospheric pressure chemical vapor deposition of silicon from silane and disilane. Giunta, Carmen J.; McCurdy, Richard J.; Chapple-Sokol, Jonathan D.; Gordon, Roy G. // Journal of Applied Physics;1/15/1990, Vol. 67 Issue 2, p1062 

    Presents a study that synthesized a coherent mechanistic picture of silicon hydride pyrolysis and applied it to explain the relationship between the pyrolysis of silane and silicon chemical vapor deposition (CVD). Gas-phase reaction mechanism proposed for the CVD of amorphous silicon from...

  • Understanding Silicone. O'Lenick, Tony // Cosmetics & Toiletries;May2006, Vol. 121 Issue 5, p95 

    Understanding silicones requires knowledge of the three operations used to make them: construction, functionalization and derivatization. These operations are explained and illustrated, respectively, with dimethicone, PEG-8 dimethicone and dimethicone copolyol silicone esters. In addition,...

  • Laser ablation of a polysilane material. Hansen, S. G.; Robitaille, T. E. // Journal of Applied Physics;8/15/1987, Vol. 62 Issue 4, p1394 

    Examines the laser ablation properties of the polysilane material, isopropyl methyl-n-propyl methyl silane copolymer (IMPMSC). Volatilization characteristics of some polysilanes; Calculation of the reported energy densities; Ablation depth in IMPMSC on silicon.

  • Kinetics of silicon epitaxy using SiH4 in a rapid thermal chemical vapor deposition reactor. Liehr, M.; Greenlief, C. M.; Kasi, S. R.; Offenberg, M. // Applied Physics Letters;2/12/1990, Vol. 56 Issue 7, p629 

    The equilibrium hydrogen surface coverage on Si(100) during silicon epitaxy using SiH4 has been measured in a rapid thermal chemical vapor deposition reactor. The hydrogen coverage could be ‘‘frozen out’’ completely on the surface by a rapid cool-down and pump-down of...

  • A surface kinetics model for the growth of Si1-xGex films from SiH4/GeH4 mixtures. Russell, N. M.; Breiland, W. G. // Journal of Applied Physics;4/1/1993, Vol. 73 Issue 7, p3525 

    Proposes a model that describes the kinetics of Si[sub1-x]Ge[subx] alloy deposition over a range of temperatures in the absence of gas-phase chemistry. Significance of low-thermal-budget processing in the growth of Si[sub1-x]Ge[subx]/silicon heterostructures; Mechanisms for the heterogeneous...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics