TITLE

Near edge x-ray absorption fine structure characterization of polycrystalline GaN grown by

AUTHOR(S)
Lubbe, M.; Braun, W.
PUB. DATE
July 1999
SOURCE
Journal of Applied Physics;7/1/1999, Vol. 86 Issue 1, p209
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the phase composition and microcrystalline structure of thin gallium nitride (GaN) grown by nitridation of oriented gallium arsenide. Detection of GaN detected by in situ Raman spectroscopy; Investigation of the local structure and ordering of the nitrided layer by nitrogen K-edge NEXAFS; How the orientational ordering was probed.
ACCESSION #
2018098

 

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