TITLE

Growth and characterization of AlGaNP on GaP(100) substrates

AUTHOR(S)
Odnoblyudov, V. A.; Tu, C. W.
PUB. DATE
February 2006
SOURCE
Applied Physics Letters;2/13/2006, Vol. 88 Issue 7, p071907
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We describe epitaxial growth of GaNP, AlNP, and AlGaNP with low nitrogen concentration (<5%) on GaP (100) substrates. Using a thermodynamic approach, we explain the difference between nitrogen incorporation into GaP and AlP. We demonstrate and explain peculiarities of AlGaNP quaternary alloy growth: Dependence of nitrogen concentration on Al composition and dependence of crystal quality on Al composition.
ACCESSION #
19876397

 

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