Ion beam etching induced structural and electronic modification of InAs and InSb surfaces studied

Frost, F.; Lippold, G.
June 1999
Journal of Applied Physics;6/15/1999, Vol. 85 Issue 12, p8378
Academic Journal
Reports on the investigation of the modification of the structural and electronic properties of indium arsenic (InAs) and indium antimony (InSb) surfaces using Raman Spectroscopy. Experimental setup and procedure; Results and discussion; Conclusions.


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