Effect of morphology on organic thin film transistor sensors

Locklin, Jason; Bao, Zhenan
January 2006
Analytical & Bioanalytical Chemistry;Jan2006, Vol. 384 Issue 2, p336
Academic Journal
This review provides a general introduction to organic field-effect transistors and their application as chemical sensors. Thin film transistor device performance is greatly affected by the molecular structure and morphology of the organic semiconductor layer. Various methods for organic semiconductor deposition are surveyed. Recent progress in the fabrication of organic thin film transistor sensors as well as the correlation between morphology and analyte response is discussed.


Related Articles

  • Simulation of twin boundary effect on characteristics of single grain-silicon thin film transistors. Yan, F.; Migliorato, P.; Ishihara, R. // Applied Physics Letters;8/13/2007, Vol. 91 Issue 7, p073509 

    The influence of twin boundaries on the characteristics of single grain-silicon thin film transistors has been analyzed by three-dimensional simulation. The simulations show that the orientation and the location of a twin boundary could affect the field-effect mobility and the leakage current of...

  • Correlation between morphology and ambipolar transport in organic field-effect transistors. Singh, Th. B.; G√ľnes, S.; Marjanovic, N.; Sariciftci, N. S.; Menon, R. // Journal of Applied Physics;6/1/2005, Vol. 97 Issue 11, p114508 

    Attaining ambipolar charge transport in organic field-effect transistors (OFET) is highly desirable from both fundamental understanding and application points of view. We present the results of an approach to obtain ambipolar OFET with an active layer of organic semiconductor blends using...

  • Control of threshold voltage in pentacene thin-film transistors using carrier doping at the charge-transfer interface with organic acceptors. Abe, Y.; Hasegawa, T.; Takahashi, Y.; Yamada, T.; Tokura, Y. // Applied Physics Letters;10/10/2005, Vol. 87 Issue 15, p153506 

    Well-controlled carrier doping was performed in pentacene thin-film transistors (TFTs) by depositing additional organic acceptor (F4TCNQ) layers on top of existing channels. The doping concentration could be predefined by changing the area covered with the acceptor layer, which provides control...

  • Fabrication and characterization of a biologically sensitive field-effect transistor using a nanocrystalline diamond thin film. Wensha Yang; Hamers, Robert J. // Applied Physics Letters;10/18/2004, Vol. 85 Issue 16, p3626 

    We report the fabrication and characterization of a biologically sensitive field-effect transistor (Bio-FET) using a nanocrystalline diamond thin film. Biomolecular recognition capability was provided by linking human immunoglobulin G (IgG) to the diamond surface. Electrical measurements reveal...

  • Tetracene light-emitting transistors on flexible plastic substrates. Santato, C.; Manunza, I.; Bonfiglio, A.; Cicoira, F.; Cosseddu, P.; Zamboni, R.; Muccini, M. // Applied Physics Letters;4/4/2005, Vol. 86 Issue 14, p141106 

    We report on organic light-emitting (field-effect) transistors (LETs) fabricated on a flexible and transparent plastic foil (Mylar), acting both as substrate and gate dielectric. The foil is patterned on one side with bottom-contact gold source and drain electrodes, while a thin film of gold is...

  • Theoretical analysis of carrier mobility in organic field-effect transistors. Yong Xu; Balestra, Francis; Ghibaudo, Gerard // Applied Physics Letters;6/6/2011, Vol. 98 Issue 23, p233302 

    A theoretical analysis of the carrier mobility in organic transistors is presented. We noticed that the assumption of zero potential at open/quasi-free surface may cause a large deviation of the areal charge density in the organic film, greater in thinner-film transistors. Taking into account...

  • N-channel carbon nanotube enabled vertical field effect transistors with solution deposited ZnO nanoparticle based channel layers. Wang, Po-Hsiang; Liu, Bo; Shen, Yu; Zheng, Ying; McCarthy, Mitchell A.; Holloway, Paul; Rinzler, Andrew G. // Applied Physics Letters;4/23/2012, Vol. 100 Issue 17, p173514 

    N-channel carbon nanotube enabled vertical field effect transistors (CN-VFETs) exploiting a solution deposited ZnO nanoparticle thin film as the channel material are demonstrated. Transistor performance benefits from a thermal anneal followed by an oxygen plasma treatment. The devices exhibit...

  • Conductive atomic force microscopy study of silica nanotrench structure. Sun, Z. G.; Kuramochi, H.; Akinaga, H.; Yu, H. H.; Gu, E. D. // Applied Physics Letters;1/22/2007, Vol. 90 Issue 4, p042106 

    Conductive atomic force microscope had been applied to study the electrical transportation mechanism together with topographic information on a periodical silica nanotrench structure. The bottom of the trench is covered by a 4 nm silica thin film, while the ridges between the trenches are made...

  • Thin Film Applications in Advanced Electron Devices. Fu-Chien Chiu; Tung-Ming Pan; Tapas Kumar Kundu; Chun-Hsing Shih // Advances in Materials Science & Engineering;2014, p1 

    No abstract available.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics