Realization of 10 Tbit/in.2 memory density and subnanosecond domain switching time in ferroelectric data storage

Cho, Yasuo; Hashimoto, Sunao; Odagawa, Nozomi; Tanaka, Kenkou; Hiranaga, Yoshiomi
December 2005
Applied Physics Letters;12/5/2005, Vol. 87 Issue 23, p232907
Academic Journal
Nanosized inverted domain dots in ferroelectric materials have potential application in ultrahigh-density rewritable data storage systems. Herein, a data storage system is presented based on scanning nonlinear dielectric microscopy and a thin film of ferroelectric single-crystal lithium tantalite. Through domain engineering, nanosized inverted domain dots have been successfully formed at a data density above 10.1 Tbit/in.2 and subnanosecond (500 ps) domain switching speed has been achieved. Moreover, actual information storage is demonstrated at a density of 1 Tbit/in.2


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