TITLE

Optical sensors based on luminescent quantum dots

AUTHOR(S)
Costa-Fernandez, Jose M.
PUB. DATE
December 2005
SOURCE
Analytical & Bioanalytical Chemistry;Dec2005, Vol. 384 Issue 1, p37
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
[Figure not available: see fulltext.]
ACCESSION #
19203917

 

Related Articles

  • Quantum beats of fine-structure states in InP quantum dots. Gerlovin, I. Ya.; Ignatĭev, I. V.; Yugova, I. A.; Masumoto, Y. // Optics & Spectroscopy;Apr2008, Vol. 104 Issue 4, p577 

    Different types of quantum beats were experimentally observed in the photoluminescence kinetics of semiconductor nanostructures with InP quantum dots characterized by strong inhomogeneous broadening of the optical transitions. Specific types of beats were selected by varying the magnitude and...

  • Growth of uniform InAs quantum dots on InGaAs surface structure modified superlattices on InP. Zhang, Z. H.; Cheng, K. Y. // Applied Physics Letters;10/13/2003, Vol. 83 Issue 15, p3183 

    We have developed a matrix layer structure, the InGaAs surface structure modified superlattice, to achieve high quality InAs quantum dots on (100) InP substrates. Formed by periodically repeating the group III- and group V-stabilized InGaAs layers, the InGaAs surface structure modified...

  • Temperature-dependent brightening and darkening of photoluminescence from PbS quantum dots in glasses. Liu, Chao; Kwon, Yong Kon; Heo, Jong // Applied Physics Letters;6/11/2007, Vol. 90 Issue 24, p241111 

    The authors report that the darkening and brightening of photoluminescence from PbS quantum dots can be controlled by adjusting the temperature and excitation intensity. Intensity of the photoluminescence from PbS quantum dots increased with time (photobrightening) when temperature was below 150...

  • Micro-photoluminescence of capped and uncapped ordered single InAs quantum dots on GaAs (311)B. Selçuk, E.; Hamhuis, G. J.; Nötzel, R. // AIP Conference Proceedings;1/4/2010, Vol. 1199 Issue 1, p535 

    Micro-photoluminescence (PL) of capped and uncapped ordered single InAs quantum dots (QDs) on patterned GaAs (311)B substrates exhibits distinct emission lines which are broadened for uncapped QDs. This indicates strong interaction with surface states paving the way towards high-sensitivity...

  • CdTe Quantum Dots in a Field Effect Structure: Photoluminescence Lineshape Analysis. Kłopotowski, Ł.; Kudelski, A.; Wojnar, P.; Tartakovskii, A. I.; Skolnick, M. S.; Krebs, O.; Voisin, P.; Kret, S.; Dłużewski, P.; Karczewski, G.; Wojtowicz, T. // AIP Conference Proceedings;1/4/2010, Vol. 1199 Issue 1, p301 

    We study an photoluminescence line of a single, self assembled CdTe quantum dot embedded in a field-effect structure. As a reverse bias is applied the line becomes broader and its intensity is decreased as a result of enhanced escape of the photocreated carriers. We account for the observed...

  • Carrier Escape Dynamics in Multilayered Self-Assembled InAs/GaAs Quantum Dots. Qu, Fanyao; Monte, A. F. G.; Hopkinson, M. // AIP Conference Proceedings;1/4/2010, Vol. 1199 Issue 1, p293 

    We report photocurrent (PC) and photoluminescence (PL) investigations of carrier escape dynamics in multilayered InAs/GaAs self-assembled quantum dots. Unusual plateau of PL intensity versus bias voltage and nonlinear dependence of PC on the laser excitation power have been observed. The former...

  • Photoluminescence lifetimes of Si quantum dots. Zianni, X.; Nassiopoulou, A. G. // Journal of Applied Physics;10/1/2006, Vol. 100 Issue 7, p074312 

    We present a continuum model for the calculation of the electron states in Si dots that accounts for the effects of size, shape, and crystallographic orientation of the dots. This formalism has been used to study the behavior of the photoluminescence (PL) lifetime in Si quantum dots. This is due...

  • Light emission and wave guiding of quantum dots in a tube. Mendach, S.; Songmuang, R.; Kiravittaya, S.; Rastelli, A.; Benyoucef, M.; Schmidt, O. G. // Applied Physics Letters;3/13/2006, Vol. 88 Issue 11, p111120 

    We present microphotoluminescence investigations of InAs quantum dots (QDs) integrated into self-rolling InGaAs/GaAs strained layers. The emission signal from the QDs is redshifted due to strain relaxation and increased in intensity after the strained layers are released from the substrate and...

  • Anomalous photo-induced spectral changes in CdSe/ZnS quantum dots. Shcherbatyuk, G. V.; Inman, R. H.; Ghosh, S. // Journal of Applied Physics;Sep2011, Vol. 110 Issue 5, p053518 

    We study photo-induced static and dynamic spectral changes in self-assembled CdSe/ZnS quantum dot (QD) thin films with varying QD concentrations under ambient conditions. Using spatially resolved scanning photoluminescence microscopy in conjunction with spectrally resolved time-correlated photon...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics