TITLE

Terahertz radiation from heavy-ion-irradiated In0.53Ga0.47As photoconductive antenna excited at 1.55 μm

AUTHOR(S)
Chimot, N.; Mangeney, J.; Joulaud, L.; Crozat, P.; Bernas, H.; Blary, K.; Lampin, J. F.
PUB. DATE
November 2005
SOURCE
Applied Physics Letters;11/7/2005, Vol. 87 Issue 19, p193510
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We investigate terahertz (THz) emission from heavy-ion-irradiated In0.53Ga0.47As photoconductive antennas excited at 1550 nm. The carrier lifetime in the highly irradiated In0.53Ga0.47As layer is less than 200 fs, the steady-state mobility is 490 cm2 V-1 s-1, and the dark resistivity is 3 Ω cm. The spectrum of the electric field radiating from the Br+-irradiated In0.53Ga0.47As antenna extends beyond 2 THz. The THz electric field magnitude is shown to saturate at high optical pump fluence, and the saturation fluence level increases with the irradiation dose, indicating that defect center scattering has a significant contribution to the transient mobility.
ACCESSION #
19105998

 

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics