Terahertz radiation from heavy-ion-irradiated In0.53Ga0.47As photoconductive antenna excited at 1.55 μm

Chimot, N.; Mangeney, J.; Joulaud, L.; Crozat, P.; Bernas, H.; Blary, K.; Lampin, J. F.
November 2005
Applied Physics Letters;11/7/2005, Vol. 87 Issue 19, p193510
Academic Journal
We investigate terahertz (THz) emission from heavy-ion-irradiated In0.53Ga0.47As photoconductive antennas excited at 1550 nm. The carrier lifetime in the highly irradiated In0.53Ga0.47As layer is less than 200 fs, the steady-state mobility is 490 cm2 V-1 s-1, and the dark resistivity is 3 Ω cm. The spectrum of the electric field radiating from the Br+-irradiated In0.53Ga0.47As antenna extends beyond 2 THz. The THz electric field magnitude is shown to saturate at high optical pump fluence, and the saturation fluence level increases with the irradiation dose, indicating that defect center scattering has a significant contribution to the transient mobility.


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