TITLE

Thin-film ferromagnetic semiconductors based on Sb2-xVxTe3 with TC of 177 K

AUTHOR(S)
Zhenhua Zhou; Yi-Jiunn Chien; Ctirad Uher
PUB. DATE
September 2005
SOURCE
Applied Physics Letters;9/12/2005, Vol. 87 Issue 11, p112503
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Thin-film ferromagnetic semiconductors Sb2-xVxTe3 with the Curie temperature as high as 177 K were prepared on sapphire (0001) substrates by molecular-beam epitaxy. Films of Sb2-xVxTe3 with x up to 0.35 display robust, out-of-plane ferromagnetic ordering that depends on the concentration of vanadium in the structure. The Curie temperature was determined from magnetization measurements and Arrott plots. Ferromagnetic order is manifested by hysteresis loops observed in magnetization, magnetoresistivity, and the anomalous Hall effect.
ACCESSION #
18332830

 

Related Articles

  • Structural and magnetic properties of epitaxially grown Ge1-xFex thin films: Fe concentration dependence. Shuto, Yusuke; Tanaka, Masaaki; Sugahara, Satoshi // Applied Physics Letters;3/26/2007, Vol. 90 Issue 13, p1 

    Ge1-xFex films (x=2.0%–24.0%) grown by low-temperature molecular beam epitaxy were shown to have a diamond-type crystal structure without any other crystallographic phase of precipitates, although they contain slightly nonuniform Fe distribution and tiny stacking fault defects. The...

  • Enhancement of the Curie temperature in GaMnAs/InGaMnAs superlattices. Koeder, A.; Frank, S.; Schoch, W.; Avrutin, V.; Sauer, R.; Waag, A.; Zuern, K.; Ziemann, P.; Limmer, W. // Applied Physics Letters;8/2/2004, Vol. 85 Issue 5, p783 

    We report on an enhancement of the Curie temperature in GaMnAs/InGaMnAs superlattices grown by low-temperature molecular beam epitaxy which is due to thin InGaMnAs or InGaAs films embedded into the GaMnAs layers. The pronounced increase of the Curie temperature is strongly correlated to the In...

  • Molecular-beam epitaxy of Mn[sub 1+x]Sb thin films and substrate temperature dependence of their.... Miyanishi, S.; Akinaga, H. // Applied Physics Letters;5/13/1996, Vol. 68 Issue 20, p2890 

    Presents the crystallographic and compositional studies of ferromagnetic Mn[sub 1+x]Sb thin films grown on gallium arsenide substrates. Application of molecular-beam epitaxy; Observation on the manganese composition of the grown films; Measurement of polar magneto-optical Kerr effect;...

  • Optical, magnetic, and transport behaviors of Ge1-xMnxTe ferromagnetic semiconductors grown by molecular-beam epitaxy. Chen, W. Q.; Lim, S. T.; Sim, C. H.; Bi, J. F.; Teo, K. L.; Liew, T.; Chong, T. C. // Journal of Applied Physics;Sep2008, Vol. 104 Issue 6, p063912 

    The optical, magnetic, and transport behaviors of Ge1-xMnxTe (x=0.24 and 0.55) grown by solid-source molecular-beam epitaxy are investigated. X-ray diffraction shows that Ge1-xMnxTe crystallizes in rocksalt structure. The temperature-dependent magnetization (M-T) for x=0.55 sample gives a Curie...

  • Observation of strongly enhanced inverse spin Hall voltage in Fe3Si/GaAs structures. Hung, H. Y.; Chiang, T. H.; Syu, B. Z.; Fanchiang, Y. T.; Lin, J. G.; Lee, S. F.; Hong, M.; Kwo, J. // Applied Physics Letters;10/13/2014, Vol. 105 Issue 15, p1 

    We performed spin pumping experiment on high quality, epitaxial Fe3Si/GaAs structures grown by molecular beam epitaxy. By tailoring the thickness and doping (n, p) level of the conducting GaAs epi-layer, thermal heating common of ferromagnetic metal/semiconductor heterostructure was removed...

  • Giant magnetocaloric effect of Mn0.92Ba0.08As thin film grown on Al2O3(0001) substrate. Duc Dung, Dang; Anh Tuan, Duong; Van Thiet, Duong; Shin, Yooleemi; Cho, Sunglae // Journal of Applied Physics;Apr2012, Vol. 111 Issue 7, p07C310 

    The epitaxial Mn0.92Ba0.08As thin film was grown on Al2O3(0001) substrate by molecular beam epitaxy. The Curie temperature (TC) around 350 K was enhanced with the addition of Ba, compared to that of bulk MnAs (TC ∼ 318 K). We have observed the linear resistivity versus the square of...

  • Growth of p-type and n-type m-plane GaN by molecular beam epitaxy. McLaurin, M.; Mates, T. E.; Wu, F.; Speck, J. S. // Journal of Applied Physics;9/15/2006, Vol. 100 Issue 6, p063707 

    Plasma-assisted molecular beam epitaxial growth of Mg-doped, p-type and Si-doped, n-type m-plane GaN on 6H m-plane SiC is demonstrated. Phase-pure, m-plane GaN films exhibiting a large anisotropy in film mosaic (∼0.2° full width at half maximum, x-ray rocking curve scan taken parallel to...

  • Interlayer coupling in (In,Mn)As/InAs/(In,Mn)As magnetic semiconductor trilayer structures. Yanagi, S.; Munekata, H.; Kitamoto, Y.; Oiwa, A.; Slupinski, T. // Journal of Applied Physics;5/15/2002 Part 1, 2 & 3, Vol. 91 Issue 10, p7902 

    p-(In,Mn)As/n-InAs/p-(In,Mn)As trilayer structures have been prepared by molecular beam epitaxy on GaSb/GaAs/GaAs(001) substrates. Ferromagnetic coupling has been found between the two magnetic p-(In,Mn)As layers with a rather thick n-InAs layer (d∼30 nm). The magnitude of the ferromagnetic...

  • Molecular beam epitaxy of MnAs/ZnSe hybrid ferromagnetic/semiconductor heterostructures. Berry, J. J.; Berry, J.J.; Chun, S. H.; Chun, S.H.; Ku, K. C.; Ku, K.C.; Samarth, N.; Malajovich, I.; Awschalom, D. D.; Awschalom, D.D. // Applied Physics Letters;12/4/2000, Vol. 77 Issue 23 

    We report the use of molecular beam epitaxy to create hybrid ferromagnetic/semiconductor heterostructures composed of MnAs and ZnSe, with a Curie temperature of 325 K. The presence of a ZnSe buffer layer exclusively stabilizes the type-B orientation of MnAs, in which the (1¯101) MnAs and...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics