TITLE

Power amplifiers

PUB. DATE
August 2005
SOURCE
Portable Design;Aug2005, Vol. 11 Issue 8, p31
SOURCE TYPE
Periodical
DOC. TYPE
Article
ABSTRACT
The article features several power amplifiers. Fairchild Semiconductor's RMPA2265PowerEdge dual-band WDCMA/UMTS RF power-amplifier module. Agilent Technologies' WS1102 and WS1401 CDMA power-amplifier modules are designed for handsets operating in the 824-849-and 1,850-1,910-MHz bands, respectively.; TriQuant Semiconductor's TQM7M5001 7x7x1.1.-millimeter multimode power-amplifier module is designed for use in CSM/EDGE handsets, wireless cards, and data links. RF Micro Devices' RF5198 linear power-amplifier module for WCDMA handset applications includes an on-chip power detector. SST Communications' SST12LP14A power amplifier supports 2.4'GHz 802.1 lb/g WLAN applications, and SSTl lLPl 1 PA supports 5-GHz 802.11a applications.
ACCESSION #
18037259

 

Related Articles

  • Power amplifiers.  // Portable Design;Aug2004, Vol. 10 Issue 8, p39 

    Describes power amplifiers from different companies. RangeCharger SE5103L/5106L/5107L CDMA power amplifier from SiGe Semiconductor Inc.; RMPA2453 RF linear power amplifier from Fairchild Semiconductor Corp.; Quad-band EDGE-capable power amplifier from RF Micro Devices Inc.

  • GaAs DRIVER POWER AMP FITS MULTIBAND BASE- STATION NEEDS. Schweber, Bill // EDN Europe;Sep2004, Vol. 49 Issue 9, p6 

    Features the RF3800 series of six driver power amplifiers from RF Micro Devices, which are gallium arsenide heterojunction-bipolar-transistor devices.

  • THE CASE FOR TRANSMIT MODULES (TxM).  // Microwave Journal;Jun2005, Vol. 48 Issue 6, p108 

    The article reports that Greensboro, North Carolina-based RF Micro Devices Inc.'s designers have developed the RF3177 and RF3178 transmit modules (TxM). A transmit module is comprised of a combination of power amplifier, controller, harmonic filters and antenna switch, all in one module. A TxM...

  • Power amplifier has been shrunk.  // Electronics Weekly;2/23/2005, Issue 2182, p28 

    The article reports that RF Micro Devices Inc. latest power amplifier (PA) module measures 6x6x1. 4mm, which represents greater than 30 per cent reduction in size versus the previous generation of PowerStar PA modules. The quad-band RF3158 (GSM/GPRS/EDGE) is optimized for linear EDGE using...

  • A CUSTOM III-V HETEROJUNCTION BIPOLAR TRANSISTOR MODEL. Nedeljkovic, Sonja R.; McMacken, John R.; Partyka, Paul J.; Gering, Joseph M. // Microwave Journal;Apr2009, Vol. 52 Issue 4, p60 

    The article outlines some of the works done at the RF Micro Devices Inc. (RFMD) in Greensboro, North Carolina, to develop and support scalable heterojunction bipolar transistor (HBT) models suitable for handset power amplifier design. It offers a brief outline of the development of a custom HBT...

  • Mobile PAs with 37dBm output power.  // Electronics Weekly;6/30/2004, Issue 2153, p25 

    RF Micro Devices Inc. is offering a series of gallium arsenide heterojunction bipolar transistor driver power amplifiers for mobile basestation infrastructure applications. Comprised of the RF3800, RF3802 and RF3805, this series of multi-band platform devices features higher breakdown voltage...

  • Power amps win with 3G mobiles.  // Electronics Weekly;2/23/2005, Issue 2182, p12 

    The article reports that the arrival of 3G mobile phones is providing an opportunity for more power amplifiers (PAs), according to RF Micro Devices Inc. According to Konrad Alvarino, general manager of power amplifier products at RF, 3G gives the company the opportunity to get more PAs in...

  • GaAs PAs for W-CDMA basestations.  // Electronics Weekly;4/6/2005, Issue 2188, p22 

    The article reports that RF Micro Devices Inc. has two gallium arsenide heterojunction bipolar transistor pre-driver power amplifiers, the half-watt RF3807 and two-watt RF3809 single-stage devices which operate across CDMA, GSM, DCS, PCS and UMTS frequencies. Operating in the UMTS frequency...

  • PRODUCT NEWS: AMPLIFIERS.  // Wireless Design & Development;Sep2004, Vol. 12 Issue 9, p50 

    Evaluates several amplifiers from various manufacturers. SiGe Semiconductor Inc.; National Semiconductor Corp.; Agilent Technologies lnc.; Fairchild Semiconductor.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics