GaN nanostructure fabrication by focused-ion-beam-assisted chemical vapor deposition

Nagata, T.; Ahmet, P.; Sakuma, Y.; Sekiguchi, T.; Chikyow, T.
July 2005
Applied Physics Letters;7/4/2005, Vol. 87 Issue 1, p013103
Academic Journal
Gallium nitride (GaN) nanostructures were fabricated by focused-ion-beam-assisted chemical vapor deposition. Gallium precursor gas and atomic nitrogen radicals were irradiated onto the surface simultaneously during the irradiation of a Ga ion beam of 25 keV at 600 °C. Scanning electron microscopy observations revealed three-dimensional structures formed periodically on the substrates. Although near-band-edge emission from GaN was observed using this method, other luminescence attributed to defects and/or impurities was also observed. Surface damage caused by the ion beam was also observed. To improve the structural shape and optical properties, a two-step growth method is proposed. First, structure formation was performed at 300 °C. Second, nitridation was performed at 600 °C to make the GaN nanostructures stoichiometric and to activate the nitrogen in the structures. GaN nanostructures of a 200 nm×100 nm block of height 50 nm were fabricated and strong near-band-edge emission at 3.37 eV from GaN was observed.


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