Chemical reaction at the interface between polycrystalline Si electrodes and HfO2/Si gate dielectrics by annealing in ultrahigh vacuum

Takahashi, H.; Toyoda, S.; Okabayashi, J.; Kumigashira, H.; Oshima, M.; Sugita, Y.; Liu, G. L.; Liu, Z.; Usuda, K.
July 2005
Applied Physics Letters;7/4/2005, Vol. 87 Issue 1, p012903
Academic Journal
We have investigated the chemical reaction at the interface between polycrystalline-Si (poly-Si) electrodes and HfO2/Si gate dielectrics by photoemission spectroscopy and x-ray absorption spectroscopy depending on the annealing temperature in an ultrahigh vacuum. From Si 2p and Hf 4f high-resolution core-level photoemission spectra, we revealed that the Hf-silicide formation starts at as low temperature as 700 °C and that the Hf-silicate layer is also formed at the interface between poly-Si electrodes and HfO2. Crystallization of the amorphous HfO2 layer even at 700 °C was suggested from valence-band and O K-edge absorption spectra. By the annealing at 800 °C, the HfO2 layer disappeared completely and the Hf-silicide clusters were formed on the Si substrate. Direct contact between poly-Si electrodes and HfO2 promotes the interfacial reaction compared to the case without poly-Si electrodes.


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