TITLE

Response to “Comment on ‘Phase transformations induced in relaxed amorphous silicon by indentation at room temperature’ ” [Appl. Phys. Lett. 87, 016102 (2005)]

AUTHOR(S)
Haberl, B.; Bradby, J. E.; Swain, M. V.; Williams, J. S.; Munroe, P.
PUB. DATE
July 2005
SOURCE
Applied Physics Letters;7/4/2005, Vol. 87 Issue 1, p016103
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents a response by the author on the criticism of the article "Phase Transformations Induced in Relaxed Amorphous Silicon by Indentation at Room Temperature." Observation of deformation in different states of amorphous silicon; Information that deposited amorphous materials always contains a high concentration of hydrogen, which again dramatically alters the nature of the deformation mechanisms; Information on the degree of crystallization during annealing.
ACCESSION #
18008389

 

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