Response to “Comment on ‘Phase transformations induced in relaxed amorphous silicon by indentation at room temperature’ ” [Appl. Phys. Lett. 87, 016102 (2005)]

Haberl, B.; Bradby, J. E.; Swain, M. V.; Williams, J. S.; Munroe, P.
July 2005
Applied Physics Letters;7/4/2005, Vol. 87 Issue 1, p016103
Academic Journal
Presents a response by the author on the criticism of the article "Phase Transformations Induced in Relaxed Amorphous Silicon by Indentation at Room Temperature." Observation of deformation in different states of amorphous silicon; Information that deposited amorphous materials always contains a high concentration of hydrogen, which again dramatically alters the nature of the deformation mechanisms; Information on the degree of crystallization during annealing.


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