Nondispersive dielectric component of ferroelectric thin films in the frequency range of 10-1–106 Hz

Jiang, A. Q.; Chu, D. P.; Migliorato, P.; Kijima, T.; Natori, E.; Shimoda, T.
July 2005
Applied Physics Letters;7/4/2005, Vol. 87 Issue 1, p012905
Academic Journal
We show that there exists a nondispersive (or elastic) capacitance component Cnon which is independent of frequency f, ac amplitude VOSC, and dc bias voltage Vdc, in the frequency range of 0.063 Hz–1 MHz. It can be separated from the total capacitance Ct of ferroelectric thin films by using either the C(Vdc,f)-C[Vdc,f(r)](VOSC=const) or C(f,VOSC)-C[f,VOSC(r)](Vdc=const) plot, where f(r) and VOSC(r) are the referenced frequency and ac amplitude, respectively. Our results suggest that the dispersive and nondispersive capacitance components may originate from different dielectric relaxation mechanisms. The extracted nondispersive Cnon can be a useful physical parameter in evaluating maximum dielectric tunability for the phase-shift application of ferroelectric thin films in microwave devices and characterizing phase-transition temperature in a multilayered 0.2Pb(Zn1/3Nb2/3)O3–0.8BaTiO3/Pb(Mg1/3Nb2/3)O3 relaxor.


Related Articles

  • Dielectric response of temperature-graded ferroelectric films. Hai-Xia Cao; Veng Cheong Lo; Zhen-Ya Li // Journal of Applied Physics;12/1/2005, Vol. 98 Issue 11, p114105 

    The dielectric susceptibility and dielectric tunability of the temperature-graded BaTiO3 thin films are investigated by using a modified transverse Ising model, taking the four-spin interaction and quantum fluctuation into account. There is a broad and smooth peak of the dielectric...

  • Dielectric and ferroelectric properties of highly oriented (Pb,Nb)(Zr,Sn,Ti)O[sub 3] thin films grown by a sol-gel process. Jiwei, Zhai; Cheung, M. H.; Xu, Zheng Kui; Li, Xin; Chen, Haydn; Colla, Eugene V.; Wu, T. B. // Applied Physics Letters;11/4/2002, Vol. 81 Issue 19, p3621 

    Antiferroelectric (Pb,Nb)(Zr,Sn,Ti)O[sub 3] thin films were deposited via a sol-gel process on LaNiO[sub 3]-coated silicon substrates. Films showed a strong (001) preferred orientation upon annealing at 500–700 °C for 30 min. The dependence of electrical properties on film thickness...

  • Dielectric enhancement and ferroelectric anomaly of compositionally graded (Pb, Ca)TiO[sub 3] thin films derived by a modified sol-gel technique. Bao, Dinghua; Yao, Xi; Xi Yao; Zhang, Liangying // Applied Physics Letters;5/8/2000, Vol. 76 Issue 19 

    Compositionally graded (Pb, Ca)TiO[sub 3] thin films were prepared on platinum-coated silicon substrates by a monoethanolamine-modified sol-gel technique. The crystalline orientation and surface morphology of the graded films were related to the deposition sequence of the film layer. The...

  • Excitation Spectra of Light-Induced Electric Responses in Doped Ferroelectric Crystals. Babadzhanyan, V. G.; Demirkhanyan, G. G.; Kokanyan, E. P. // Optics & Spectroscopy;Jan2000, Vol. 88 Issue 1, p46 

    On the basis of studies of light-induced responses of doped lithium niobate crystals, a new approach to the spectroscopy of polar materials is developed. An experimental technique is described and possible applications and advantages of the approach are discussed.

  • Transformation of Dielectric Properties and Appearance of Relaxation Behavior in Pb5(Ge1 – xSix)3O11 Crystals. Bush, A. A.; Kamentsev, K. E.; Mamin, R. F. // Journal of Experimental & Theoretical Physics;Jan2005, Vol. 100 Issue 1, p139 

    The special features of the dielectric properties and conduction of ferroelectric crystals of Pb5(Ge1 – xSix)3O11 (0 ≤ x ≤ 0.67) solid solutions were studied. Permittivity anomalies close to the temperatures T1 ≈ 260 K and T2 ≈ 130 K, the appearance of relaxator...

  • Extension of thickness-dependent dielectric breakdown law on adiabatically compressed ferroelectric materials. Shkuratov, Sergey I.; Baird, Jason; Talantsev, Evgueni F. // Applied Physics Letters;2/4/2013, Vol. 102 Issue 5, p052906 

    It is experimentally found that the Eb(d) = γ · d-ξ law describing the thickness-dependent breakdown electric field for solid dielectrics at ambient conditions can be extended for dielectrics in other thermodynamic states. It follows from the experimental results reported herein that...

  • Tungsten bronze type dielectrics in SrO-Sm2O3-TiO2-Nb2O5 system and their dielectric anomaly. Sun, Y. H.; Chen, X. M.; Zheng, X. H. // Journal of Applied Physics;12/15/2004, Vol. 96 Issue 12, p7435 

    The dielectric behavior and the features of the diffused phase transition of the SrpSm6-pTi8-pNb2+pO30 (p=4,5) ceramics were investigated together with their structure. Both Sr5SmTi3Nb7O30 and Sr4Sm2Ti4Nb6O30 had tungsten bronze structure and weak ferroelectric nature. Though Sr5SmTi3Nb7O30...

  • Ferroelectric-like hysteresis loop in nonferroelectric systems. Pintilie, L.; Alexe, M. // Applied Physics Letters;9/12/2005, Vol. 87 Issue 11, p112903 

    A ferroelectric-like hysteresis loop is obtained for a nonferroelectric system consisting of two back-to-back metal-semiconductor Schottky contacts with a large concentration of traps distributed over a finite thickness near the electrodes. The presented results show that a simple hysteresis...

  • Quantitative microscopy of nonlinear dielectric constant using a scanning evanescent microwave microscopy. Bo Hu; Wenhan Liu; Chen Gao; Xiaohong Zhu; Dongning Zheng // Applied Physics Letters;7/24/2006, Vol. 89 Issue 4, p044102 

    Quantitative characterization of dielectric nonlinearity in ferroelectric materials has been successfully performed using a scanning evanescent microwave microscope, and a key calibration coefficient for quantitative microscopy of nonlinear dielectric constant is derived. This unique technique...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics