TITLE

Controlled p- and n-type doping of Fe2O3 nanobelt field effect transistors

AUTHOR(S)
Zhiyong Fan; Xiaogang Wen; Shihe Yang; Lu, Jia G.
PUB. DATE
July 2005
SOURCE
Applied Physics Letters;7/4/2005, Vol. 87 Issue 1, p013113
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Pure α-Fe2O3 nanobelts are configured as field effect transistors and electrical transport studies demonstrate their n-type behavior. In order to control the electrical properties of the fabricated transistor, the nanobelt channels are doped with zinc. Depending on the doping condition, α-Fe2O3 nanobelts can be modified to either p-type or n-type with enhanced conductivity and electron mobility. Such behavior change is exhibited in the variation of the current-voltage (I-V) and I-Vg characteristics.
ACCESSION #
18008382

 

Related Articles

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics