TITLE

Comment on “Phase transformations induced in relaxed amorphous silicon by indentation at room temperature” [Appl. Phys. Lett. 85, 5559 (2004)]

AUTHOR(S)
Chaudhri, M. Munawar; Hasko, David G.; Khayyat, Maha M. O.
PUB. DATE
July 2005
SOURCE
Applied Physics Letters;7/4/2005, Vol. 87 Issue 1, p016102
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Comments on the phase transformations induced in relaxed amorphous silicon by indentation at room temperature. Information that Raman spectroscopy was used to show clearly that when a Vickers diamond indenter was loaded at room temperature on to a 300-nanometer-thick amorphous film of silicon that was deposited on a 0.4-mm-thick plate of sapphire; Report that the amorphous film was produced by silicon ion implantation of an epitaxial crystalline silicon film deposited on the sapphire; Information on the diamond anvil experiments.
ACCESSION #
18008378

 

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