Structural characterization of zincblende Ga1-xMnxN epilayers grown by molecular beam epitaxy on (001) GaAs substrates

Fay, M. W.; Han, Y.; Brown, P. D.; Novikov, S. V.; Edmonds, K. W.; Campion, R. P.; Gallagher, B. L.; Foxon, C. T.
July 2005
Applied Physics Letters;7/18/2005, Vol. 87 Issue 3, p031902
Academic Journal
Zincblende p-type Ga1-xMnxN epilayers, grown with and without AlN/GaN buffer layers using plasma-assisted molecular beam epitaxy on (001) oriented GaAs substrates, have been investigated using a variety of complementary transmission electron microscopy techniques. The epilayers were found to contain a high anisotropic density of stacking faults and microtwins. MnAs inclusions were identified at the Ga1-xMnxN/(001)GaAs interface extending into the substrate. The use of AlN/GaN buffer layers was found to inhibit the formation of these inclusions.


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