Tuning of electronic coupling between self-assembled quantum dots

Rybchenko, S. I.; Itskevich, I. E.; Skolnick, M. S.; Cahill, J.; Tartakovskii, A. I.; Hill, G.; Hopkinson, M.
July 2005
Applied Physics Letters;7/18/2005, Vol. 87 Issue 3, p033104
Academic Journal
Semiconductor self-assembled quantum dots (SAQDs) normally have zero-dimensional properties, but become coupled and acquire higher-dimensional character if the distance between the dots is small. Using photoluminescence spectroscopy under high hydrostatic pressure, we have obtained clear evidence for electronic coupling due to quantum-mechanical tunneling in stacks of InGaAs/GaAs SAQDs. We demonstrate that application of pressure allows controllable tuning and suppression of the electronic coupling. The effect originates from a pressure-induced increase in the effective mass of Γ-electrons and a related increase in the interdot-barrier height.


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