Hole drift-mobility measurements in microcrystalline silicon

Dylla, T.; Finger, F.; Schiff, E. A.
July 2005
Applied Physics Letters;7/18/2005, Vol. 87 Issue 3, p032103
Academic Journal
We have measured transient photocurrents on several p-i-n solar cells based on microcrystalline silicon. For two of these samples, we were able to obtain conclusive hole drift-mobility measurements. Despite the predominant crystallinity of these samples, temperature-dependent measurements were consistent with an exponential-bandtail trapping model for transport, which is usually associated with noncrystalline materials. We estimated valence bandtail widths of about 31 meV and hole band mobilities of 1–2 cm2/V s. The measurements support mobility-edge transport for holes in these microcrystalline materials, and broaden the range of materials for which mobility-edge transport corresponds to an apparently universal band mobility of order 1 cm2/V s.


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