Electron spin injection into GaAs from ferromagnetic contacts in remanence

Gerhardt, N. C.; Hövel, S.; Brenner, C.; Hofmann, M. R.; Lo, F.-Y.; Reuter, D.; Wieck, A. D.; Schuster, E.; Keune, W.; Westerholt, K.
July 2005
Applied Physics Letters;7/18/2005, Vol. 87 Issue 3, p032502
Academic Journal
We demonstrate electrical spin injection into a (GaIn)As/GaAs light-emitting diode from the remanent state of ferromagnetic contacts in perpendicular geometry. Using a Fe/Tb multilayer structure with perpendicular magnetic anisotropy and a reverse-biased Schottky contact, we achieve a circular polarization degree of the emitted light of 0.75% at 90 K.


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