TITLE

Evidence of interface-induced persistent photoconductivity in InP/In0.53Ga0.47As/InP double heterostructures grown by molecular-beam epitaxy

AUTHOR(S)
Hudait, M. K.; Lin, Y.; Goss, S. H.; Smith, P.; Bradley, S.; Brillson, L. J.; Johnston, S. W.; Ahrenkiel, R. K.; Ringel, S. A.
PUB. DATE
July 2005
SOURCE
Applied Physics Letters;7/18/2005, Vol. 87 Issue 3, p032106
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The impact of interface switching sequences on interface quality and minority carrier recombination in In0.53Ga0.47As/InP double heterostructure (DH) grown by solid-source molecular-beam epitaxy (MBE) was studied. As2 exposure at the lower In0.53Ga0.47As/InP interface prior to In0.53Ga0.47As growth was found to cause enhanced As diffusion into the underlying InP that correlates with steadily increased photoconductive decay (PCD) lifetimes beyond the theoretical radiative and Auger limit. Low-temperature PCD measurements reveal that a persistent photoconductivity (PPC) process is responsible for the high “apparent” lifetimes. The PPC effect increases monotonically with As2 exposure on the InP surface, implying the involvement of interfacial defects in the carrier recombination dynamics of In0.53Ga0.47As/InP DHs grown by MBE.
ACCESSION #
18008274

 

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