Evidence of interface-induced persistent photoconductivity in InP/In0.53Ga0.47As/InP double heterostructures grown by molecular-beam epitaxy

Hudait, M. K.; Lin, Y.; Goss, S. H.; Smith, P.; Bradley, S.; Brillson, L. J.; Johnston, S. W.; Ahrenkiel, R. K.; Ringel, S. A.
July 2005
Applied Physics Letters;7/18/2005, Vol. 87 Issue 3, p032106
Academic Journal
The impact of interface switching sequences on interface quality and minority carrier recombination in In0.53Ga0.47As/InP double heterostructure (DH) grown by solid-source molecular-beam epitaxy (MBE) was studied. As2 exposure at the lower In0.53Ga0.47As/InP interface prior to In0.53Ga0.47As growth was found to cause enhanced As diffusion into the underlying InP that correlates with steadily increased photoconductive decay (PCD) lifetimes beyond the theoretical radiative and Auger limit. Low-temperature PCD measurements reveal that a persistent photoconductivity (PPC) process is responsible for the high “apparent” lifetimes. The PPC effect increases monotonically with As2 exposure on the InP surface, implying the involvement of interfacial defects in the carrier recombination dynamics of In0.53Ga0.47As/InP DHs grown by MBE.


Related Articles

  • Lateral conductivity of p-type doped Si/Ge island structures. Gergel', V. A.; Burbaev, T. M.; Kurbatov, V. A.; Pogosov, A. O.; Rzaev, M.; Sibel'din, N. N.; Shcheleva, I. M.; Yakupov, M. N. // Semiconductors;Jul2007, Vol. 41 Issue 7, p818 

    Numerical calculations of the conductance in structures with doping modulated along the current-flow direction are carried out taking into account band offsets at the interfaces between high-and low-resistivity regions. It is found that such structures exhibit S-shaped current-voltage...

  • Characterization and modeling of n-n Si/SiC heterojunction diodes. Pérez-Tomás, A.; Jennings, M. R.; Davis, M.; Covington, J. A.; Mawby, P. A.; Shah, V.; Grasby, T. // Journal of Applied Physics;7/1/2007, Vol. 102 Issue 1, p014505 

    In this paper we investigate the physical and electrical properties of silicon layers grown by molecular beam epitaxy on 4H-SiC substrates, evaluating the effect of the Si doping, Si temperature deposition, and SiC surface cleaning procedure. Si/SiC monolithic integration of Si circuits with SiC...

  • Effects of Be doping on InP nanowire growth mechanisms. Yee, R. J.; Gibson, S. J.; Dubrovskii, V. G.; LaPierre, R. R. // Applied Physics Letters;12/24/2012, Vol. 101 Issue 26, p263106 

    Be-doped InP nanowires were grown by the gold-assisted vapour-liquid-solid mechanism in a gas source molecular beam epitaxy system. The InP nanowire length versus diameter [L(D)] dependence revealed an unexpected transition with increasing Be dopant concentration. At Be dopant concentration...

  • Low temperature growth of highly doped GaAs:Si by atomic layer molecular beam epitaxy. Silveira, J.P.; Briones, F. // Applied Physics Letters;8/1/1994, Vol. 65 Issue 5, p573 

    Examines the use of atomic layer molecular beam epitaxy technique (ALMBE) to obtain gallium arsenide layers highly doped with silicon at low temperature. Characterization of the samples by Hall effect with van der Pauw configuration; Effect of the DX level resonant on photoconductivity;...

  • High-temperature interstitial oxygen diffusion retardation in epitaxial-layered heavily arsenic- or boron-doped Czochralski silicon wafers. Wang, Q.; Ihsiu Ho // Applied Physics Letters;4/10/2006, Vol. 88 Issue 15, p154107 

    Interstitial oxygen (Oi) diffusivity was examined in epitaxial-layered silicon substrates of various types (heavily doped arsenic and heavily doped boron) in varying annealing conditions. When a heavily doped arsenic substrate was annealed at up to 1125 °C, the Oi diffusion slowed by 28%...

  • Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy. Hudait, M. K.; Zhu, Y.; Johnston, S. W.; Maurya, D.; Priya, S.; Umbel, R. // Applied Physics Letters;3/4/2013, Vol. 102 Issue 9, p093119 

    GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendellösung oscillations. The kinetics of the carrier recombination in...

  • Separation of bulk and surface electron transport in metamorphic InAs layers using quantitative mobility spectrum analysis. Y. Lin; Arehart, A. R.; Carlin, A. M.; Ringel, S. A. // Applied Physics Letters;8/11/2008, Vol. 93 Issue 6, p062109 

    Electron transport in low dislocation density, strain-relaxed InAs layers grown on metamorphic InAsyP1-y/InP substrates by molecular beam epitaxy was characterized using quantitative mobility spectrum analysis (QMSA) of Hall effect measurements. QMSA applied to systematically varied metamorphic...

  • Depletion of the In2O3(001) and (111) surface electron accumulation by an oxygen plasma surface treatment. Bierwagen, Oliver; Speck, James S.; Nagata, Takahiro; Chikyow, Toyohiro; Yamashita, Yoshiyuki; Yoshikawa, Hideki; Kobayashi, Keisuke // Applied Physics Letters;4/25/2011, Vol. 98 Issue 17, p172101 

    Using x-ray photoemission spectroscopy (XPS) and current-voltage (I-V) measurements of Hg contacts we show that the surface electron accumulation layer of In2O3 can be removed by an oxygen plasma treatment. For the untreated sample, XPS measured a downward band bending toward the surface and a...

  • Heavy p-doping of ZnTe by molecular beam epitaxy using a nitrogen plasma source. Han, J.; Stavrinides, T.S.; Kobayashi, M.; Gunshor, R.L.; Hagerott, M.M.; Nurmikko, A.V. // Applied Physics Letters;2/22/1993, Vol. 62 Issue 8, p840 

    Demonstrates the heavy p-doping of zinc telluride (ZnTe) semiconductor by molecular beam epitaxy using a nitrogen plasma source. Importance for short wavelength visible-light-emitting devices; Characterization of doped ZnTe; Implication for the formation of ohmic contact to p-zinc selenide.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics