Band gap and band offset of (GaIn)(PSb) lattice matched to InP

Köhler, F.; Böhm, G.; Meyer, R.; Amann, M.-C.
July 2005
Applied Physics Letters;7/18/2005, Vol. 87 Issue 3, p032102
Academic Journal
Metastable (GaxIn1-x)(PySb1-y) layers were grown on (001) InP substrates by gas source molecular beam epitaxy. Low-temperature photoluminescence spectroscopy was applied to these heterostructures and revealed spatially indirect band-to-band recombination of electrons localized in the InP with holes in the (GaxIn1-x)(PySb1-y). In addition, samples with layer thicknesses larger than 100 nm showed direct PL across the band gap of (GaxIn1-x)(PySb1-y). Band-gap energies and band offset energies of (GaxIn1-x)(PySb1-y) relative to InP were derived from these PL data. A strong bowing parameter was observed.


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