Intraband absorption in silicon nanocrystals: The combined effect of shape and crystal orientation

de Sousa, J. S.; Leburton, J.-P.; Freire, V. N.; da Silva, Jr., E. F.
July 2005
Applied Physics Letters;7/18/2005, Vol. 87 Issue 3, p031913
Academic Journal
We investigate intraband transitions in Si/SiO2 quantum dots (QD’s) by using a tridimensional quantum mechanical model that takes into account the six-valley structure of silicon. The interplay between QD orientation and shape strongly affects the infrared absorption spectra of Si QD’s. In particular, we show the orientation of the Si valleys dramatically changes the optical properties of Si QD’s.


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