Investigation of the electrical activity of partial dislocations in SiC p-i-n diodes

Maximenko, Serguei I.; Pirouz, Pirouz; Sudarshan, Tangali S.
July 2005
Applied Physics Letters;7/18/2005, Vol. 87 Issue 3, p033503
Academic Journal
The electron-beam-induced current (EBIC) mode of scanning electron microscopy was employed to investigate the nucleation and development of stacking faults (SFs) during forward high current stress operation of 4H–SiC p-i-n diodes. The EBIC technique is shown to be a valuable tool for the visualization and analysis of mobile and immobile partial dislocations bounding the SFs and their recombination activity. Both Si and C core partial dislocations exhibit similar EBIC contrast. It is shown that threading edge dislocations can be one source of SF generation leading to the degradation of p-i-n diodes.


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