TITLE

Influence of the anneal conditions on arsenic activation during solid-phase epitaxial regrowth

AUTHOR(S)
Pawlak, B. J.; Duffy, R.; Janssens, T.; Vandervorst, W.; Maex, K.; Smith, A. J.; Cowern, N. E. B.; Dao, T.; Tamminga, Y.
PUB. DATE
July 2005
SOURCE
Applied Physics Letters;7/18/2005, Vol. 87 Issue 3, p031915
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We investigate the influence of the initial stage of the thermal treatment during solid-phase epitaxial regrowth (SPER) on the electrical activation level of arsenic in self-amorphized silicon, both with respect to heating ramp-up rates and the use of low-temperature preanneals. Enhancement of the electrically-active arsenic concentration by 14% is observed for activation with the fastest ramp-up rates (430 °C/s) compared to the slowest ones (36 °C/s). Around 50% of the 1015 at/cm2, arsenic implant at 5 keV is found to be nonsubstitutional and this fraction reaches even 99% for dose 3×1015 at/cm2. Arsenic clustering in silicon amorphous phase during SPER is recognized to play an important role in the decrease of the active dose.
ACCESSION #
18008231

 

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