TITLE

Effects of post-deposition annealing in O2 on the electrical characteristics of LaAlO3 films on Si

AUTHOR(S)
Miotti, L.; Bastos, K. P.; Driemeier, C.; Edon, V.; Hugon, M. C.; Agius, B.; Baumvol, I. J. R.
PUB. DATE
July 2005
SOURCE
Applied Physics Letters;7/11/2005, Vol. 87 Issue 2, p022901
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
LaAlO3 films were deposited on p-type Si(100) by sputtering from a LaAlO3 target. C×V characteristics were determined in nonannealed and O2-annealed capacitors having LaAlO3 films as dielectric and RuO2 as top electrode. Thermal annealing in O2 atmosphere reduced flat band voltage to acceptable values for advanced Si-based devices. 16O–18O isotopic substitution was characterized by Rutherford backscattering spectrometry and nuclear resonant reaction profiling. Chemical analysis of the films was accomplished by x-ray photoelectron spectroscopy. The electrical improvements observed after thermal annealing in O2 were attributed to the incorporation of oxygen from the gas phase, possibly healing oxygen vacancies in the films and providing mobile oxygen to the interface.
ACCESSION #
18008220

 

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