Magnetoresistance sensor with an out-of-plane magnetized sensing layer

van Dijken, Sebastiaan; Coey, J. M. D.
July 2005
Applied Physics Letters;7/11/2005, Vol. 87 Issue 2, p022504
Academic Journal
A concept for a linear and reversible magnetoresistance sensor is demonstrated using a magnetic spin valve. The sensor is based on coherent rotation of an out-of-plane magnetized sensing layer in parallel-to-plane applied magnetic fields. For Pt/CoFe sensing layers, the sensor response depends critically on the perpendicular magnetic anisotropy of the CoFe film and, therefore, on its thickness tCoFe. Sensors with small tCoFe exhibit a high linearity up to applied fields of about 50 mT, but their magnetic field sensitivity is rather small. The sensitivity, however, increases with tCoFe and it reaches its maximum value just below the spin reorientation transition in the CoFe sensing layer.


Related Articles

  • A method of separating the giant magnetoresistance and the anisotropic magnetoresistance in multilayers. Miller, B. H.; Chen, E. Youjun; Dahlberg, E. Dan // Journal of Applied Physics;5/15/1993, Vol. 73 Issue 10, p6384 

    Presents a method of separating the giant magnetoresistance and the anisotropic magnetoresistance in multilayers. Basis for the technique; Separation of two magnetoresistance contributions; Alignment of the current and magnetic field.

  • Magnetoresistance of antiferromagnetic metals with localized magnetic moments. Ali, Naushad; Woods, S. B. // Journal of Applied Physics;4/15/1987, Vol. 61 Issue 8, p4393 

    Focuses on a study which investigated the magnetoresistance (MR) of antiferromagnetic metals with localized magnetic moments. Description of MR in general; Observation on anisotropy in the longitudinal and transverse magnetoresistances; Temperature dependence of the MR at various fields.

  • Large cone angle magnetization precession of an individual nanopatterned ferromagnet with dc electrical detection. Costache, M. V.; Watts, S. M.; Sladkov, M.; van der Wal, C. H.; van Wees, B. J. // Applied Physics Letters;12/4/2006, Vol. 89 Issue 23, p232115 

    The on-chip resonant driving of large cone-angle magnetization precession of an individual nanoscale Permalloy element is demonstrated. Strong driving is realized by locating the element in close proximity to the shorted end of a coplanar strip waveguide, which generates a microwave magnetic...

  • Highly sensitive anisotropic magnetoresistance magnetometer for Eddy-current nondestructive evaluation. He, D. F.; Tachiki, M.; Itozaki, H. // Review of Scientific Instruments;Mar2009, Vol. 80 Issue 3, p036102 

    Using a commercially available anisotropic magnetoresistance (AMR) sensor of HMC1001, we developed a sensitive magnetometer. It could operate in amplifier mode or feedback mode. The magnetic field sensitivity of the AMR sensor was about 3.2 mV/V G. When the AMR sensor was biased by a voltage of...

  • Anisotropy of the magnetoresistance in the case of trapping of magnetic fields in granular bismuth-containing high-T[sub c] superconductors. Sukhanov, A. A.; Omelchenko, V. I. // Low Temperature Physics;Apr2003, Vol. 29 Issue 4, p297 

    A study is made of the features of the magnetoresistance in ceramic Bi(Pb)-HTSCs containing trapped magnetic fields. It is found that upon trapping of magnetic flux in these granular HTSCs their magnetoresistance becomes anisotropic. For magnetic fields H parallel to the field H[SUBi] that has...

  • Magnetic Field Sensor Based on Compensated Silicon. Bakhadyrkhanov, M. K.; Iliev, Kh. M.; Ayupov, K. S.; Sattorov, O. É. // Technical Physics Letters;Sep2003, Vol. 29 Issue 9, p705 

    The phenomenon of negative magnetoresistance in compensated silicon doped with manganese has been studied. The possibility of using this effect in magnetic field sensors is assessed. © 2003 MAIK “Nauka / Interperiodica”.

  • Partial magnetization reversal using laser annealing in patterned NiFe/FeMn film. Choi, S. D.; Kim, S. W.; Jin, D. H.; Lee, M. S.; Joo, H. W.; Lee, K. A.; Lee, S. S.; Hwang, D. G. // European Physical Journal B -- Condensed Matter;May2005, Vol. 45 Issue 2, p219 

    We have studied local magnetization reversal by laser annealing in exchange biased NiFe/FeMn bilayer. Local magnetization reversal was performed by using the Nd:YAG laser under external magnetic field. When the laser illuminated the patterned film with the power of above 300 mW during 15 min, a...

  • Tunneling anisotropic magnetoresistance in epitaxial CoFe/n-GaAs junctions. Uemura, Tetsuya; Imai, Yosuke; Harada, Masanobu; Matsuda, Ken-ichi; Yamamoto, Masafumi // Applied Physics Letters;5/4/2009, Vol. 94 Issue 18, p182502 

    Magnetic and transport properties of a fully epitaxial CoFe/n-GaAs junction were investigated. The CoFe film grown on the GaAs showed strong magnetic anisotropy in which uniaxial anisotropy with an easy axis of [110] dominated with a slight cubic anisotropy having easy axes...

  • Destruction Of an Orbitally Ordered and Spin-Polarized State: Colossal Magnetoresistance in Ca3Ru207. Cao, G.; Balicas, L.; Lin, X. N.; Chikara, S.; Elhami, E.; Duairaj, V.; Brill, J. W.; Rai, R. C.; Crow, J. E. // Journal of Electronic Materials;Nov2004, Vol. 33 Issue 11, p1303 

    The Ca3Ru207 with a Mott-like transition at 48 K and a Neel temperature at 56 K features different in-plane anisotropies of magnetization and magnetoresistance. Applying the magnetic field along the magnetic easy axis precipitates a spin-polarized state via a first-order metamagnetic transition...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics