Improvement of current gain of C-doped GaAsSb-base heterojunction bipolar transistors by using an InAlP emitter

Oda, Yasuhiro; Yokoyama, Haruki; Kurishima, Kenji; Kobayashi, Takashi; Watanabe, Noriyuki; Uchida, Masahiro
July 2005
Applied Physics Letters;7/11/2005, Vol. 87 Issue 2, p023503
Academic Journal
Large conduction band edge discontinuity (ΔEc) at the emitter/base interface in InP/GaAs0.51Sb0.49/InP heterojunction bipolar transistor (HBT) is one of the possible reasons that the recombination process in the emitter/base depletion region dominates the characteristics of this HBT. We fabricate an InAlP emitter/GaAs0.51Sb0.49base/InP collector HBT for reducing the ΔEc at the emitter/base interface. It is demonstrated that a HBT with an InAlP emitter shows a relatively lower recombination current than one with an InP emitter, resulting in the higher current gain. It is also found that the decrease of recombination current depends on the Al content of InAlP emitter. Additionally, the ideality factor of the emitter-base current is smallest at the Al content of 0.15 in the InAlP emitter. These results indicate that using an InAlP emitter is effective for improving the current gain of GaAsSb-base HBTs.


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