TITLE

Eu locations in Eu-doped InGaN/GaN quantum dots

AUTHOR(S)
Andreev, Thomas; Monroy, Eva; Gayral, Bruno; Daudin, Bruno; Nguyen Quang Liem; Hori, Yuji; Tanaka, Mitsuhiro; Oda, Osamu; Le Si Dang, Daniel
PUB. DATE
July 2005
SOURCE
Applied Physics Letters;7/11/2005, Vol. 87 Issue 2, p021906
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on the photoluminescence and photoluminescence excitation studies of Eu-doped wurtzite InGaN quantum dots (QDs) embedded in a GaN matrix grown by plasma-assisted molecular-beam epitaxy. The location of Eu3+ ions either in InGaN QDs or in the GaN spacing layer is assigned by comparing the different behaviors of the 5D0→7F2 emission around 620 nm under various photoexcitation energies and temperatures to those observed in Eu-doped GaN/AlN QDs and a Eu-doped GaN thick layer.
ACCESSION #
18008184

 

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