TITLE

Low-temperature metalorganic chemical vapor deposition of luminescent manganese-doped aluminum nitride films

AUTHOR(S)
Sato, A.; Azumada, K.; Atsumori, T.; Hara, K.
PUB. DATE
July 2005
SOURCE
Applied Physics Letters;7/11/2005, Vol. 87 Issue 2, p021907
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Mn-doped AlN films have been prepared at a substrate temperature of 400 °C by metalorganic chemical vapor deposition using bismethylcyclopentadienyl manganese as a Mn source. The Mn concentration in the films (CMn) was controlled extensively in the region from 2×1018 to 1×1021 cm-3. The samples showed red-orange photoluminescence (PL) and cathodoluminescence (CL) originated from the transition of 3d-electrons in Mn ions incorporated in AlN. The maximum emission intensities were observed at different CMn for PL and CL, which was discussed in terms of the excitation mechanism of the Mn center. The electroluminescence (EL) property was also investigated by fabricating thin-film EL devices with the AlN:Mn active layer on glass substrates.
ACCESSION #
18008183

 

Related Articles

  • Near band-edge transition in aluminum nitride thin films grown by metal organic chemical vapor deposition. Tang, Xiao; Hossain, Fazla; Wongchotigul, Kobchat; Spencer, Michael G. // Applied Physics Letters;3/23/1998, Vol. 72 Issue 12 

    Cathodoluminescence measurements were performed for carbon doped and undoped aluminum nitride thin films in the temperature range from liquid helium to room temperature. The AlN films were grown on three different substrates: 6H–SiC, 4H–SiC, and sapphire. From these samples, a...

  • Homoepitaxial diamond films codoped with phosphorus and nitrogen by chemical-vapor deposition. Cao, G. Z.; Driessen, F. A. J. M.; Bauhuis, G. J.; Giling, L. J.; Alkemade, P. F. A. // Journal of Applied Physics;9/1/1995, Vol. 78 Issue 5, p3125 

    Focuses on a codoped diamond by introducing phosphine and nitrogen simultaneously into the gas phase using hot filament chemical-vapor deposition. Concentrations of phosphorus and nitrogen in the epitaxial films; Findings of cathodoluminescence and photoluminescence studies; Use of Hall-effect...

  • High-quality single GaAs quantum wells grown by metalorganic chemical vapor deposition. Miller, R. C.; Dupuis, R. D.; Petroff, P. M. // Applied Physics Letters;1984, Vol. 44 Issue 5, p508 

    GaAs-AlxGa1-xAs single and multiquantum well structures grown by metalorganic chemical vapor deposition have been examined for the first time in detail using low-temperature photoluminescence, cathodoluminescence, and transmission electron microscopy. The better heterointerfaces are very uniform...

  • Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition. Paskov, P. P.; Schifano, R.; Monemar, B.; Paskova, T.; Figge, S.; Hommel, D. // Journal of Applied Physics;11/1/2005, Vol. 98 Issue 9, p093519 

    We report on the emission properties of nonpolar a-plane GaN layers grown on r-plane sapphire. Temperature-, excitation-density-, and polarization-dependent photoluminescences and spatially resolved microphotoluminescence and cathodoluminescence are employed in order to clarify the nature of the...

  • Structural analysis of AlN and (Ti1-XAlX)N coatings made by plasma enhanced chemical vapor deposition. Lee, Sang-Hyeob; Kim, Byoung-June; Kim, Hyung-Hwan; Lee, Jung-Joong // Journal of Applied Physics;8/1/1996, Vol. 80 Issue 3, p1469 

    Discusses a structural analysis of aluminum nitride and (titanium[sub1-x] aluminum[subx]) nitrogen coatings made by plasma enhanced chemical vapor deposition. Experimental details; Structure of the coatings as a function of composition; Findings of the study.

  • InGaN composition and growth rate during the early stages of metalorganic chemical vapor deposition. Gerthsen, D.; Neubauer, B.; Rosenauer, A.; Stephan, T.; Kalt, H.; Scho¨n, O.; Heuken, M. // Applied Physics Letters;10/15/2001, Vol. 79 Issue 16, p2552 

    Transmission electron microscopy (TEM) and photoluminescence (PL) spectroscopy were applied to study the metalorganic chemical vapor deposition of InGaN and the correlation between the structural properties and luminescence of GaN/In[sub x]Ga[sub 1-x]N-quantum well structures. A series of...

  • CVD Diamond Solves Thermal Challenges. Aidala, Dwain A. // Advanced Packaging;Oct2006, Vol. 15 Issue 8, p38 

    The article discusses the chemical vapor deposition (CVD) diamond as a solution to high thermal conductivity in electronic devices. CVD diamond, with an isotropic thermal conductivity of 1000-1200 watts per meter-Kelvin, caters a mounting surface with thermal conductivity better than other...

  • Photoluminescence properties of AlN homoepilayers with different orientations. Sedhain, A.; Nepal, N.; Nakarmi, M. L.; Al tahtamouni, T. M.; Lin, J. Y.; Jiang, H. X.; Gu, Z.; Edgar, J. H. // Applied Physics Letters;7/28/2008, Vol. 93 Issue 4, p041905 

    AlN homoepilayers and heteroepilayers were grown on polar c-plane and nonpolar a-plane and m-plane orientations of AlN bulk and sapphire substrates by metal organic chemical vapor deposition. A systematic comparative study of photoluminescence properties of these samples revealed that all AlN...

  • High quality AlN grown on double layer AlN buffers on SiC substrate for deep ultraviolet photodetectors. Al tahtamouni, T. M.; Lin, J. Y.; Jiang, H. X. // Applied Physics Letters;11/5/2012, Vol. 101 Issue 19, p192106 

    High quality AlN epilayers were grown on SiC substrates using double layer AlN buffers growth method by metal organic chemical vapor deposition and exploited as active deep ultraviolet optoelectronic materials through the demonstration of AlN Schottky barrier photodetectors. The grown AlN...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics