Low-temperature metalorganic chemical vapor deposition of luminescent manganese-doped aluminum nitride films

Sato, A.; Azumada, K.; Atsumori, T.; Hara, K.
July 2005
Applied Physics Letters;7/11/2005, Vol. 87 Issue 2, p021907
Academic Journal
Mn-doped AlN films have been prepared at a substrate temperature of 400 °C by metalorganic chemical vapor deposition using bismethylcyclopentadienyl manganese as a Mn source. The Mn concentration in the films (CMn) was controlled extensively in the region from 2×1018 to 1×1021 cm-3. The samples showed red-orange photoluminescence (PL) and cathodoluminescence (CL) originated from the transition of 3d-electrons in Mn ions incorporated in AlN. The maximum emission intensities were observed at different CMn for PL and CL, which was discussed in terms of the excitation mechanism of the Mn center. The electroluminescence (EL) property was also investigated by fabricating thin-film EL devices with the AlN:Mn active layer on glass substrates.


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