Effects of growth temperature on the structural and optical properties of 1.55 μm GaInNAsSb quantum wells grown on GaAs

Bank, Seth R.; Yuen, Homan B.; Wistey, Mark A.; Lordi, Vincenzo; Bae, Hopil P.; Harris Jr., James S.
July 2005
Applied Physics Letters;7/11/2005, Vol. 87 Issue 2, p021908
Academic Journal
We investigate the effects of growth temperature on the structural and optical properties of GaInNAsSb single quantum wells grown by molecular beam epitaxy. Peak room-temperature photoluminescence occurred at 1.65 μm as-grown and at 1.55 μm under optimal annealing conditions. Excellent room-temperature optical efficiency was observed from samples grown between 420 and 460 °C, with a maximum at 440 °C. However, luminescence was degraded approximately two orders of magnitude for a sample grown at 470 °C. High-resolution x-ray diffraction showed substantial structural degradation and a reduction in strain for the 470 °C sample. Low temperature photoluminescence measurements were also employed to study localization and quenching effects; both became more severe with increasing growth temperature.


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