Characterization of highly (110)- and (111)-oriented Pb(Zr,Ti)O3 films on BaPbO3 electrode using Ru conducting barrier

Chun-Sheng Liang; Jenn-Ming Wu
July 2005
Applied Physics Letters;7/11/2005, Vol. 87 Issue 2, p022906
Academic Journal
Highly non-(001)-oriented Pb(Zr,Ti)O3 (PZT) films have been fabricated by rf-magnetron sputtering. The preferential (110)-oriented BaPbO3 (BPO) deposited on Ru buffer layer induces the growth of (110)-oriented PZT film. With the aid of self-organized growth of PZT, the orientation of the film deposited on random-oriented BPO/Pt(111)/Ru(002) is (111)-preferred. The insertion of Pt layer between BPO and Ru changes the orientation of PZT from (110) to (111) and prevents the oxygen diffusion. These non-(001)-oriented PZT films possess more superior ferroelectric, fatigue, and retention properties than those of (001)-oriented PZT films.


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