TITLE

Spin-cast thin semiconducting polymer interlayer for improving device efficiency of polymer light-emitting diodes

AUTHOR(S)
Ji-Seon Kim; Friend, Richard H.; Grizzi, Ilaria; Burroughes, Jeremy H.
PUB. DATE
July 2005
SOURCE
Applied Physics Letters;7/11/2005, Vol. 87 Issue 2, p023506
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report that adding a thin (∼10 nm) semiconducting polymer interlayer between apoly(styrenesulphonate)-doped poly(3,4-ethylenedioxythiophene) (PEDT:PSS) hole transporter and an emissive semiconductor significantly improves the device efficiency of polymer light-emitting diodes (LEDs). With the interlayer, the external quantum efficiency (EQE) increases from 0.7%(0.4 cd/A at 3.7 V) to 1.9% (1.0 cd/A at 3.3 V) at 100 cd/m2 for red LEDs and from 1.9%(6.2 cd/A at 3.4 V) to 3.0% (10.1 cd/A at 3.0 V) at 1000 cd/m2 for green LEDs. An EQE of 4.0% is also observed in blue LEDs (35% increase). The interlayer is spin-coated directly on top of the PEDT:PSS layer from a poly(2,7-(9,9-di-n-octylfluorene)-alt-(1,4-phenylene-((4-sec-butylphenyl)imino)-1,4-phenylene)) (TFB) solution. This interlayer prevents significant quenching of radiative excitons at the PEDT:PSS interface by acting as an efficient exciton blocking layer.
ACCESSION #
18008166

 

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