Control of threshold voltage of organic field-effect transistors with double-gate structures

Iba, Shingo; Sekitani, Tsuyoshi; Kato, Yusaku; Someya, Takao; Kawaguchi, Hiroshi; Takamiya, Makoto; Sakurai, Takayasu; Takagi, Shinichi
July 2005
Applied Physics Letters;7/11/2005, Vol. 87 Issue 2, p023509
Academic Journal
We fabricated pentacene field-effect transistors with planar-type double-gate structures, where the top- and bottom-gate electrodes can independently apply voltage biases to channel layers. The threshold voltage of organic transistors is changed systematically in a wide range from -16 to -43 V when the voltage bias of the top-gate electrode is changed from 0 to +60 V. The mobility in the linear regime is almost constant (0.2 cm2/V s) at various voltage biases of the top-gate electrode and the on/off ratio is 106.


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