TITLE

Control of threshold voltage of organic field-effect transistors with double-gate structures

AUTHOR(S)
Iba, Shingo; Sekitani, Tsuyoshi; Kato, Yusaku; Someya, Takao; Kawaguchi, Hiroshi; Takamiya, Makoto; Sakurai, Takayasu; Takagi, Shinichi
PUB. DATE
July 2005
SOURCE
Applied Physics Letters;7/11/2005, Vol. 87 Issue 2, p023509
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We fabricated pentacene field-effect transistors with planar-type double-gate structures, where the top- and bottom-gate electrodes can independently apply voltage biases to channel layers. The threshold voltage of organic transistors is changed systematically in a wide range from -16 to -43 V when the voltage bias of the top-gate electrode is changed from 0 to +60 V. The mobility in the linear regime is almost constant (0.2 cm2/V s) at various voltage biases of the top-gate electrode and the on/off ratio is 106.
ACCESSION #
18008163

 

Related Articles

  • High-mobility bottom-contact n-channel organic transistors and their use in complementary ring oscillators. Byungwook Yoo; Taeho Jung; Basu, Debarshi; Dodabalapur, Ananth; Jones, Brooks A.; Facchetti, Antonio; Wasielewski, Michael R.; Marks, Tobin J. // Applied Physics Letters;2/20/2006, Vol. 88 Issue 8, p082104 

    The electrical characteristics of bottom-contact organic field-effect transistors fabricated with the air-stable n-type semiconductor N,N′-bis(n-octyl)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-8CN2) are described. The mobility, threshold voltage, subthreshold swing, and Ion/Ioff...

  • Ambipolar organic field-effect transistors on unconventional substrates. Cosseddu, P.; Mattana, G.; Orgiu, E.; Bonfiglio, A. // Applied Physics A: Materials Science & Processing;Apr2009, Vol. 95 Issue 1, p49 

    In this paper we report on the realization of flexible all-organic ambipolar field-effect transistors (FETs) realized on unconventional substrates, such as plastic films and textile yarns. A double layer pentacene-C60 heterojunction was used as the semiconductor layer. The contacts were made...

  • Pentacene field-effect transistors with sub-10-nm channel lengths. Liang Wang; Fine, Daniel; Taeho Jung; Basu, Debarshi; von Seggern, Heinz; Dodabalapur, Ananth // Applied Physics Letters;9/6/2004, Vol. 85 Issue 10, p1772 

    The field effect in pentacene thin-film transistors was studied using bottom-contact devices with channel lengths below 10 nm. To suppress spreading current in these devices, which have a small channel width-to-length (W-L) ratio, we employed a pair of guarding electrodes as close as 20 nm to...

  • Organic integrated complementary inverters with ink-jet printed source/drain electrodes and sub-micron channels. Gili, E.; Caironi, M.; Sirringhaus, H. // Applied Physics Letters;3/19/2012, Vol. 100 Issue 12, p123303 

    We have demonstrated device operation of down-scaled n-type field effect transistors (FETs) with ink-jet printed source/drain contacts and sub-μm channel length, using the P(NDI2OD-T2) semiconducting polymer as active material. We integrated these devices with down-scaled p-type FETs made...

  • Ambipolar pentacene field-effect transistors with calcium source-drain electrodes. Yasuda, Takeshi; Goto, Takeshi; Fujita, Katsuhiko; Tsutsui, Tetsuo // Applied Physics Letters;9/13/2004, Vol. 85 Issue 11, p2098 

    Field-effect transistors consisted of vacuum-sublimed polycrystalline pentacene films and calcium source-drain electrodes were prepared and device characteristics were evaluated in an oxygen-free condition. The field-effect transistor showed typical ambipolar characteristics and field-effect...

  • Contact and channel resistances of organic field-effect transistors based on benzodithiophene-dimer films deposited on pentacene crystallinity control layers. Kurokawa, A.; Matsumoto, Y.; Shibamoto, K.; Kajimoto, Kaori; Osuga, H.; Yamakado, Hideo; Uno, K.; Tanaka, Ichiro // Applied Physics Letters;12/28/2009, Vol. 95 Issue 26, p263307 

    We have investigated contact and channel resistances of organic field-effect transistors (FETs) based on benzodithiophene (BDT)-dimer films deposited on thin pentacene layers used as crystallinity control layers (CCLs). The contact resistance of source/drain electrodes made of conductive organic...

  • Direct top-down fabrication of nanoscale electrodes for organic semiconductors using fluoropolymer resists. Park, Jungho; Ho, Jonathan; Yun, Hoyeol; Park, Myeongjin; Lee, Jung; Seo, Miri; Campbell, Eleanor; Lee, Changhee; Pyo, Seungmoon; Lee, Sang // Applied Physics A: Materials Science & Processing;Jun2013, Vol. 111 Issue 4, p1051 

    We report the use of a fluoropolymer resist for the damage-free e-beam lithographic patterning of organic semiconductors. The same material is also shown to be suitable as an orthogonal electron beam resist for the patterning of top-contact electrodes on organic thin films. We demonstrate this...

  • Evaluation of Intrinsic Charge Carrier Transport at Insulator-Semiconductor Interfaces Probed by a Non-Contact Microwave-Based Technique. Yoshihito Honsho; Tomoyo Miyakai; Tsuneaki Sakurai; Akinori Saeki; Shu Seki // Scientific Reports;11/15/2013, p1 

    We have successfully designed the geometry of the microwave cavity and the thin metal electrode, achieving resonance of the microwave cavity with the metal-insulator-semiconductor (MIS) device structure. This very simple MIS device operates in the cavity, where charge carriers are injected...

  • Reduced Sheet Resistance In Pentacene Field-Effect Transistors Using Thiol-Modified Electrodes. Pham, D. V.; Gravenstein, Y.; Bock, C.; Kunze, U.; Käfer, D.; Witte, G.; Wöll, Ch. // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p363 

    An anthracene-2-thiol treatment of the electrodes in bottom-contact pentacene field-effect transistors is used to improve the performance of organic transistors. Transistors with different channel lengths are prepared in order to separate the sheet resistance from the parasitic series resistance...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics