Highest conductivity oxide SrMoO3 grown by a floating-zone method under ultralow oxygen partial pressure

Nagai, Ichiro; Shirakawa, Naoki; Ikeda, Shin-ichi; Iwasaki, Ryusuke; Nishimura, Hiroshi; Kosaka, Masashi
July 2005
Applied Physics Letters;7/11/2005, Vol. 87 Issue 2, p024105
Academic Journal
Single crystals of a highly conductive oxide SrMoO3 have been grown by a floating-zone method under argon atmosphere with ultralow oxygen partial pressure p(O2)∼10-25 atm. The obtained single crystals of SrMoO3 reveal quite low resistivity at 300 K ρ(300 K)=5.1 μΩ cm, which is the lowest to date in the values of ρ(300 K) of all the oxides. Resistivity and specific heat data suggest that electrons in SrMoO3 behave as the Fermi liquid (correlated electron), and that its low resistivity is due to the extremely small electron-phonon interaction in SrMoO3.


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