Deep defects and their electron-capture cross sections in polymorphous silicon-germanium thin films

Meaudre, M.; Gueunier-Farret, M. E.; Meaudre, R.; Kleider, J. P.; Vignoli, S.; Canut, B.
August 2005
Journal of Applied Physics;8/1/2005, Vol. 98 Issue 3, p033531
Academic Journal
Hydrogenated silicon-germanium alloys (SiGe:H) are deposited by plasma-enhanced chemical vapor deposition in a plasma regime close to that of the formation of powder. It is thus possible to obtain nanostructured materials that we call polymorphous materials, pm-Si1-xGex:H. Studies of space-charge-limited currents and space-charge relaxation allow to get information on midgap states originating from Ge. It is observed that the electron-capture cross section of states at the Fermi level increases linearly with their concentration. This is supported by modulated photocurrent experiments. Finally, it is shown that the variations of both the Ge dangling bond concentration and their electron-capture cross section with Ge content account for the photoresponse in these materials.


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