Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching

Sharma, R.; Haberer, E. D.; Meier, C.; Hu, E. L.; Nakamura, S.
August 2005
Applied Physics Letters;8/1/2005, Vol. 87 Issue 5, p051107
Academic Journal
A three-period vertically oriented GaN-based air-gap distributed Bragg reflector structure was fabricated using band-gap-selective photoelectrochemical (PEC) etching. The epitaxial structure consisted of an Al0.08Ga0.92N/(In0.04Ga0.96N/In0.07Ga0.93N) superlattice structure, wherein the InGaN layers served as sacrificial layers during PEC etching. Microreflectance measurements yielded an average enhancement in the reflected signal of ∼12-fold over the wavelength range of 550–650 nm, when compared with the signal from a dry-etched GaN surface.


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