TITLE

Unfaulting of dislocation loops in the GaInNAs alloy: An estimation of the stacking fault energy

AUTHOR(S)
Herrera, M.; González, D.; Lozano, J. G.; García, R.; Hopkinson, M.; Liu, H. Y.; Gutierrez, M.; Navaretti, P.
PUB. DATE
July 2005
SOURCE
Journal of Applied Physics;7/15/2005, Vol. 98 Issue 2, p023521
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A study by transmission electron microscopy of the influence of the In and N contents in the ranges of 20%–35% and 1.1%–3%, respectively, on the microstructure of Ga1-xInxNyAs1-y quantum wells is presented. Frank dislocation loops characterized as extrinsic have been found in the samples with x>=0.25. In these structures, threading dislocations appear as a consequence of the unfaulting of the loops for y>=0.014. An analysis of the density and size of the dislocation loops has provided an estimation of the critical radius for the unfaulting process. A model for this critical radius of the unfaulting process of extrinsic Frank loops is proposed. From this model and experimental values of critical radius, an estimation of the stacking fault energy of the GaInNAs alloy has been made. We have found a reduction in the stacking fault energy of the GaInNAs alloys when increasing the N content from 1.4% to 2.3% in good agreement with the theoretical estimation of the stacking fault energies of zinc-blende GaN and InN.
ACCESSION #
17818238

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics