Spin-polarized And Ballistic Transport In InSb/InAlSb Heterostructures

Hong Chen; Peters, J. A.; Govorov, A. O.; Heremans, J. J.; Goel, N.; Chung, S. J.; Santos, M. B.
June 2005
AIP Conference Proceedings;2005, Vol. 772 Issue 1, p1379
Academic Journal
We describe and experimentally demonstrate a method to create spin-polarized ballistic electrons through spin-orbit coupling in a two-dimensional electron system in an InSb/InAlSb heterostructure. Reflection of a spin-unpolarized injected beam from a lithographic barrier creates two fully spin-polarized side beams, in addition to an unpolarized specularly reflected beam. Antidot lattices were also fabricated in the InSb/InAlSb heterostructure. The temperature dependence of the antidot magnetoresistance from 0.4 K to 50 K was studied to characterize ballistic electron transport in InSb/InAlSb. © 2005 American Institute of Physics


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