TITLE

Features of Multilayer CdTe/ZnTe Quantum Dot Structures: Optical Studies

AUTHOR(S)
Bagaev, Victor S.; Onishchenko, Evgeny E.
PUB. DATE
June 2005
SOURCE
AIP Conference Proceedings;2005, Vol. 772 Issue 1, p755
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Studies of multilayer CdTe/ZnTe quantum-dot (QD) structures with different thickness of ZnTe spacer layer grown on a thick CdTe buffer layer have been carried out by optical spectroscopy methods. A complicated strain-distribution pattern within the structure with the thinnest ZnTe spacer layer (12 monolayers) result in a situation when an additional luminescence band appearing in the emission spectrum of the structrure is likely caused by the spatially indirect excitons. The analysis of photoluminescence temperature dependence allows us to conclude that a rather intense exciton migration within the ordered QD clusters (presenting in the structure) takes place already at temperatures of few tens of Kelvin. © 2005 American Institute of Physics
ACCESSION #
17804576

 

Related Articles

  • Photo-oxidation-enhanced coupling in densely packed CdSe quantum-dot films. Wang, Xiaoyong; Zhang, Jiayu; Nazzal, Amjad; Xiao, Min // Applied Physics Letters;7/7/2003, Vol. 83 Issue 1, p162 

    Photo-oxidation of densely packed monolayer of CdSe quantum dots (QDs) was studied by time-resolved photoluminescence (PL) spectroscopy. Electrons yielded in QDs by the strong laser-pulse irradiation can assist the oxidation of CdSe QDs. Such rapid photo-oxidation does not introduce more...

  • Specific Features of Photoluminescence of InAs/GaAs QD Structures at Different Pumping Levels. Kulbachinskii, V. A.; Rogozin, V. A.; Lunin, R. A.; Belov, A. A.; Karuzskiĭ, A. L.; Perestoronin, A. V.; Zdoroveishchev, A. V. // Semiconductors;Nov2005, Vol. 39 Issue 11, p1308 

    Photoluminescence spectra of InAs/GaAs QD structures have been studied at different pumping powers and temperatures. At low pumping levels, one of the spectral lines in an undoped sample is shifted as the power increases. As the temperature increases, the luminescence intensity in the...

  • Spectroscopy and carrier dynamics in CdSe self-assembled quantum dots embedded in ZnxCdyMg1-x-ySe. Comanescu, G.; Wang, W. B.; Gundry, S.; Das, B.; Alfano, R. R.; Perez-Paz, M. N.; Tamargo, M. C.; Muñoz, M.; Popov, I.; Isaacs, L. L. // Applied Physics Letters;6/20/2005, Vol. 86 Issue 25, p253113 

    Time-resolved and steady-state photoluminescence, reflectivity, and absorption experiments were performed on CdSe quantum dots in ZnxCdyMg1-x-ySe barriers. Studies of the capture times of the photoexcited carriers into the quantum dots and of electron-hole recombination times inside the dots...

  • Carrier transfer from wetting layer to quantum dots studied by cw-resolved and time-resolved photoluminescence in CdSe/ZnSe quantum dot system. Kim, Tae Soo; Lee, Byoung Woo; Oh, Eunsoon; Lee, Sanghoon; Furdyna, J. K. // Journal of Applied Physics;Mar2010, Vol. 107 Issue 6, p063517 

    We have studied the cw-resolved and time-resolved photoluminescence (PL) spectra of the CdSe quantum dots (QDs), where PL peaks from the “wetting layer” and from the QDs are observed. The temporal behavior of the PL spectra after a short-pulse laser excitation provides evidence of...

  • Characterization of self-assembled InAs quantum dots with InAlAs/InGaAs strain-reduced layers by photoluminescence spectroscopy. Chang, K. P.; Yang, S. L.; Chuu, D. S.; Hsiao, R. S.; Chen, J. F.; Wei, L.; Wang, J. S.; Chi, J. Y. // Journal of Applied Physics;4/15/2005, Vol. 97 Issue 8, p083511 

    The optoelectronic characteristics of self-assembled InAs quantum dots (QDs) with strain-reduced layers (SRLs) were investigated using photoluminescence (PL) spectroscopy. Various SRLs that combine In0.14Al0.86As and In0.14Ga0.86As with the same total thickness were examined to ascertain their...

  • Effect of cap-layer growth rate on morphology and luminescence of InAs/InP(001) quantum dots grown by metal-organic vapor phase epitaxy. Michon, A.; Sagnes, I.; Patriarche, G.; Beaudoin, G.; Mérat-Combes, M. N.; Saint-Girons, G. // Journal of Applied Physics;8/1/2006, Vol. 100 Issue 3, p033508 

    This work reports on the influence of the InP cap-layer growth rate on the structural and optical properties of InAs/InP quantum dots (QDs) grown by metal-organic vapor phase epitaxy. A careful correlation between the structural and optical properties of the QDs completed by a modeling of their...

  • Near-field spectroscopy of bimodal size distribution of InAs/AlGaAs single quantum dots. Young-Jun Yu; In-Taek Jeong; Jong-Chun Woo; Wonho Jhe // Applied Physics Letters;10/3/2005, Vol. 87 Issue 14, p143108 

    We report on high-resolution photoluminescence (PL) spectroscopy of size distribution of InAs/AlGaAs quantum dots (QDs) by using a near-field scanning optical microscope (NSOM). The double-peaked distribution of PL spectra is clearly observed, which is associated with the bimodal size...

  • Tuning InAs quantum dots for high areal density and wideband emission. Ngo, C. Y.; Yoon, S. F.; Fan, W. J.; Chua, S. J. // Applied Physics Letters;3/12/2007, Vol. 90 Issue 11, p113103 

    The authors report the effect of growth temperature and monolayer coverage on areal density and photoluminescence spectral width of InAs quantum dot (QD). Areal density and spectral width were found to be strongly dependent on growth temperature and monolayer coverage, respectively. Upon proper...

  • Effect of Grain Boundaries on the Properties of Cadmium Telluride Grown under Nonequilibrium Conditions. Ushakov, V. V.; Klevkov, Yu. V. // Semiconductors;Nov2003, Vol. 37 Issue 11, p1259 

    Microphotoluminescence spectroscopy and imaging were used to study the effect of grain boundaries on the properties of textured CdTe polycrystals with a single-crystal grain size of 1�2 mm grown under nonequilibrium conditions. The technological procedure included low-temperature synthesis...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics