TITLE

Thermally activated carriers transfer process for the success of InGaN/GaN multi-quantum well light emitting devices

AUTHOR(S)
Yang, C. L.; Liang, H.; Yu, L. S.; Qi, Y. D.; Wang, D. L.; Lu, Z. D.; Lau, K. M.; Ding, L.; Wang, J. N.; Fung, K. K.; Ge, W. K.
PUB. DATE
June 2005
SOURCE
AIP Conference Proceedings;2005, Vol. 772 Issue 1, p765
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Temperature dependent electroluminescence (EL) and photoluminescence (PL) spectra were studied for blue, green and yellow-green InGaN/GaN light emitting devices (LEDs). Selective excitation has unambiguously proven that the origin of the 3.27 eV defect peak was radiative recombination at the defects in the GaN barriers adjacent to the QDs. Temperature dependent photoluminescence excitation (PLE) spectra demonstrated a still clearer evidence that at low temperatures the carrier transfer efficiency to the luminescent InGaN QDs is poor, due to carriers being captured by the defects in the GaN barrier. At high temperatures however those carriers generated inside the GaN barriers contribute more effectively to and finally dominate the PL emission of the InGaN QDs, showing a thermally activated carrier transfer process from the GaN layer to the QDs. High resolution transmission electron microscopy (HRTEM) pictures were used to reveal that the origin of the defects is most probably due to stacking faults in the GaN barrier. © 2005 American Institute of Physics
ACCESSION #
17804571

 

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